Real-time monitoring of organic vapor-phase deposition of molecular thin films using high-pressure reflection high-energy electron diffraction

被引:17
|
作者
Lunt, Richard R.
Benziger, Jay B.
Forrest, Stephen R. [1 ]
机构
[1] Princeton Univ, Dept Chem Engn, Princeton, NJ 08544 USA
[2] Princeton Univ, Inst Mat Sci & Technol, Princeton, NJ 08544 USA
[3] Univ Michigan, Dept Elect Engn, Ann Arbor, MI 48109 USA
[4] Univ Michigan, Dept Comp Sci, Ann Arbor, MI 48109 USA
[5] Univ Michigan, Dept Phys, Ann Arbor, MI 48109 USA
[6] Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA
关键词
D O I
10.1063/1.2736274
中图分类号
O59 [应用物理学];
学科分类号
摘要
The crystalline thin film growth of the organic material, copper phthalocyanine (CuPc), by organic vapor-phase deposition (OVPD) is studied using high-pressure reflection high-energy electron diffraction (HP-RHEED). In situ growth of this material was monitored, in real time, on both highly oriented pyrolytic graphite and native SiO2 on Si(100) substrates. The growth of the first several monolayers on both substrates was found to be independent of the growth conditions; however, the crystalline texture of thicker films was controlled through changes in the substrate temperature and deposition rate. Higher substrate temperatures lead to an increase in crystalline ordering for growth on both substrates. This work shows that HP-RHEED is a powerful tool for real-time monitoring of growth morphology in the low-vacuum OVPD environment, ultimately leading to in situ control of thin film crystalline order. (C) 2007 American Institute of Physics.
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