Chemical deposition routes to HfO2:: Real-time monitoring and film growth.

被引：0

作者：

Forsgren, K ^{[1
]}

Hårsta, A ^{[1
]}

Aarik, J ^{[1
]}

Aidla, A ^{[1
]}

机构：

[1] Univ Uppsala, Angstrom Lab, Dept Chem Mat, SE-75121 Uppsala, Sweden

来源：

FUNDAMENTAL GAS-PHASE AND SURFACE CHEMISTRY OF VAPOR-PHASE DEPOSITION II AND PROCESS CONTROL, DIAGNOSTICS, AND MODELING IN SEMICONDUCTOR MANFACTURING IV | 2001年 / 2001卷 / 13期

关键词：

D O I：

暂无

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

This study describes thin film deposition of HfO2 by CVD and ALCVD using HfI4 as the metal precursor for the first time. The layer by layer growth was also studied in real time with a Quartz Crystal Microbalance (QCM). Monoclinic HfO2 was deposited on MgO and poly-Si substrates in a wide temperature range, and the choice of substrate was found to have a strong influence on the orientation of the films. In ALCVD, the deposition rate was independent of the growth temperature, whereas in CVD, an exponential rate increase was observed.

引用

页码：152 / 159

页数：8

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