Long wavelength InGa(N)As/GaAs QW laser structures grown by MOVPE

被引：1
|
作者：
Mereuta, A [1 ]
Bouchoule, S [1 ]
Sagnes, I [1 ]
Alexandre, F [1 ]
Le Roux, G [1 ]
Decobert, J [1 ]
机构：
[1] OPTO, Groupement Interet Econ, F-91460 Marcoussis, France
来源：
2000 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS | 2000年
关键词：
D O I：
10.1109/ICIPRM.2000.850354
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In0.35Ga0.65NyAs1-y/GaAs (y similar to 0-3%) Quantum Well (QWs) structures grown by MOVPE with room temperature photoluminescence in 1.18 -1.59 mu m range and their broad area laser characteristics are presented. Infinite threshold current densities of 0.095, 1.22 and 2.3 kA/cm(2) at 1.18, 1.22 and 1.24 mu m emission wavelengths, for laser diodes with 0, 0.4 and 0.5% of nitrogen, were obtained, respectively. A characteristic temperature (T-0) value of 80K was determined for as-cleaved InGaAs QW lasers, while a T-0 value as high as 117K was obtained for InGaNAs (y similar to 0.4%) QW lasers in the 20-80 degrees C temperature range.
引用
收藏
页码：541 / 544
页数：4
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