Long wavelength InGa(N)As/GaAs QW laser structures grown by MOVPE

被引：1

作者：

Mereuta, A ^{[1
]}

Bouchoule, S ^{[1
]}

Sagnes, I ^{[1
]}

Alexandre, F ^{[1
]}

Le Roux, G ^{[1
]}

Decobert, J ^{[1
]}

机构：

[1] OPTO, Groupement Interet Econ, F-91460 Marcoussis, France

来源：

2000 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS | 2000年

关键词：

D O I：

10.1109/ICIPRM.2000.850354

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In0.35Ga0.65NyAs1-y/GaAs (y similar to 0-3%) Quantum Well (QWs) structures grown by MOVPE with room temperature photoluminescence in 1.18 -1.59 mu m range and their broad area laser characteristics are presented. Infinite threshold current densities of 0.095, 1.22 and 2.3 kA/cm(2) at 1.18, 1.22 and 1.24 mu m emission wavelengths, for laser diodes with 0, 0.4 and 0.5% of nitrogen, were obtained, respectively. A characteristic temperature (T-0) value of 80K was determined for as-cleaved InGaAs QW lasers, while a T-0 value as high as 117K was obtained for InGaNAs (y similar to 0.4%) QW lasers in the 20-80 degrees C temperature range.

引用

页码：541 / 544

页数：4

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