InGaAsN/GaAs QD and QW structures grown by MOVPE

被引：5

作者：

Daniltsev, VM ^{[1
]}

Drozdov, MN ^{[1
]}

Drozdov, YN ^{[1
]}

Gaponova, DM ^{[1
]}

Khrykin, OI ^{[1
]}

Murel, AV ^{[1
]}

Shashkin, VI ^{[1
]}

Vostokov, NV ^{[1
]}

机构：

[1] Russian Acad Sci, Heterostruct Technol Dept, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia

来源：

JOURNAL OF CRYSTAL GROWTH | 2003年 / 248卷

关键词：

nitrogen incorporation; photoluminescence; metalorganic vapor phase epitaxy; quantum dots; quantum wells; GaInAsN;

D O I：

10.1016/S0022-0248(02)01923-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

InGaAsN/GaAs heterostructures were grown by low pressure MOVPE. Their structural and optical properties were investigated. Pseudomorphic InGaAsN/GaAs layers with a band gap as low as 0.9 eV as well as ternary InAsN quantum dot and well structures were fabricated. It was shown that the addition of a few percent of nitrogen during the formation of the InAs quantum dots led to a decrease in their dimensions and density which was also accompanied by a sharpening of their uniformity distribution. An increase of the nitrogen content reduced the lattice mismatch between InAsN and GaAs. This also gave rise to a layer-by-layer growth mode and smooth heterointerfaces. The InAsN/GaAs multiple quantum well heterostructures so fabricated had improved structural quality and demonstrated intense photoluminescence at room temperature. (C) 2002 Published by Elsevier Science B.V.

引用

页码：343 / 347

页数：5

共 50 条

[1] Long wavelength InGa(N)As/GaAs QW laser structures grown by MOVPE
Mereuta, A
Bouchoule, S
Sagnes, I
Alexandre, F
Le Roux, G
Decobert, J
[J]. 2000 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2000, : 541 - 544
[2] ZnSe/ZnMgSSe QW structures grown by MOVPE on ZnSe(100), ZnSe(511) and GaAs(100) substrates
Kozlovsky, VI
Krysa, AB
Korostelin, YV
Shapkin, PV
Kalisch, H
Luenenbuerger, M
Heuken, M
[J]. JOURNAL OF CRYSTAL GROWTH, 1998, 184 : 124 - 128
[3] Performance comparison of strained InGaNAs/GaAs and InGaAs/GaAs QW laser diodes grown by MOVPE
Mereuta, A
Bouchoule, S
Alexandre, F
Sagnes, I
Decobert, J
Ougazzaden, A
[J]. ELECTRONICS LETTERS, 2000, 36 (05) : 436 - 437
[4] Comparison of photocurrent spectra of InGaAsN QD and InGaAs QW laser devices
Gao, Q
Buda, M
Tan, HH
Jagadish, C
[J]. COMMAD 04: 2004 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS AND DEVICES, PROCEEDINGS, 2005, : 9 - 12
[5] ZnSe/ZnMgSSe QW structures grown by MOVPE on transparent ZnSSe substrates
Krysa, AB
Korostelin, YV
Kozlovsky, VI
Shapkin, PV
Kalisch, H
Rüland, R
Heuken, M
Heime, K
[J]. MICROELECTRONIC ENGINEERING, 2000, 51-2 : 19 - 26
[6] Optical study of GaAsN/GaAs and InGaAsN/GaAs T-shaped quantum wires grown by MOVPE
Klangtakai, Pawinee
Sanorpim, Sakuntam
Onabe, Kentaro
[J]. JOURNAL OF CRYSTAL GROWTH, 2013, 370 : 200 - 203
[7] Investigation of deep-level defects in InGaAsN/GaAs 3xQWs structures grown by AP-MOVPE
Gelczuk, L.
Dabrowska-Szata, M.
Kamyczek, P.
Placzek-Popko, E.
Kopalko, K.
Sciana, B.
Pucicki, D.
Radziewicz, D.
Tlaczala, M.
[J]. ELECTRON TECHNOLOGY CONFERENCE 2013, 2013, 8902
[8] Characterization of piezoelectric and pyroelectric properties of MOVPE-grown strained (111)A InGaAs/GaAs QW structures by modulation spectroscopy
Cho, S
Kim, J
Sanz-Hervás, A
Majerfeld, A
Patriarche, G
Kim, BW
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2003, 195 (01): : 260 - 264
[9] GAAS/ALGAAS QUANTUM WELL STRUCTURES GROWN BY MOVPE
LEITCH, AWR
VERMAAK, JS
EHLERS, HL
RAUBENHEIMER, D
[J]. SOUTH AFRICAN JOURNAL OF SCIENCE, 1988, 84 (08) : 708 - 710
[10] MOVPE growth of strained InGaAsN/GaAs quantum wells
Saito, H
Makimoto, T
Kobayashi, N
[J]. JOURNAL OF CRYSTAL GROWTH, 1998, 195 (1-4) : 416 - 420

← 1 2 3 4 5 →