A high-sensitivity hydrogen sensor based on a Pd/InP Schottky diode structure

被引：0
|
作者：
Pan, HJ [1 ]
Liu, WC [1 ]
Yu, KH [1 ]
Wang, WC [1 ]
Feng, SC [1 ]
Shih, HJ [1 ]
机构：
[1] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan
来源：
COMPOUND SEMICONDUCTOR POWER TRANSISTORS II AND STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS XXXII) | 2000年 / 2000卷 / 01期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A high-sensitivity Pd/InP Schottky diode hydrogen sensor has been fabricated and demonstrated. The detecting mechanism associated with the metal-semiconductor interface property has also been studied. The reduction of Schottky barrier in the ambient containing hydrogen results in the significant increase of current. For 50ppm hydrogen concentration in air, a hydrogen saturation sensitivity of 2 can be obtained. In addition, the transient response exhibits short reaction and recovery times of 5 and 12 seconds, respectively.
引用
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页码：276 / 281
页数：6
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