Sensitivity of Pt/ZnO Schottky diode characteristics to hydrogen

被引：0

作者：

Kim, S ^{[1
]}

Kang, BS ^{[1
]}

Ren, F ^{[1
]}

Ip, K ^{[1
]}

Heo, YW ^{[1
]}

Norton, DP ^{[1
]}

Pearton, SJ ^{[1
]}

机构：

[1] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

来源：

STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS XL (SOTAPOCS XL) AND NARROW BANDGAP OPTOELECTRONIC MATERIALS AND DEVICES II | 2004年 / 2004卷 / 02期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Pt/ ZnO Schottky diodes show changes in forward current of 0.3 mA at a forward bias of 0.5V or alternatively a change of 50 mV bias at a fixed forward current of 8 mA when 5 ppm of H-2 is introduced into a N-2 ambient at 25degreesC. The rectifying current-voltage(I-V) characteristic shows a non-reversible collapse to Ohmic behavior when as little as 50 ppm of H-2 is present in the N-2 ambient. At higher temperatures, the recovery is thermally activated with an activation energy of similar to0.25 eV. This suggests that introduction of hydrogen shallow donors into the ZnO is a contributor to the change in current of the diodes.

引用

页码：152 / 160

页数：9

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