Non-invasive characterization and quality assurance of silicon micro-strip detectors using pulsed infrared laser

被引:0
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作者
Ghosh, P. [1 ,2 ,3 ]
机构
[1] Goethe Univ Frankfurt, Inst Kernphys IKP, Max von Laue Str 1, D-60438 Frankfurt, Germany
[2] GSI Helmholtzzentrum Schwerionenforsch GmbH, Planckstr 1, D-64291 Darmstadt, Germany
[3] Facil Antiproton & Ion Res Europe GmbH, Planckstr 1, D-64291 Darmstadt, Germany
来源
关键词
Interaction of radiation with matter; Radiation-hard detectors; Detection of defects; Charge induction;
D O I
10.1088/1748-0221/11/01/C01019
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
The Compressed Baryonic Matter (CBM) experiment at FAIR is composed of 8 tracking stations consisting of roughly 1300 double sided silicon micro-strip detectors of 3 different dimensions. For the quality assurance of prototype micro-strip detectors a non-invasive detector charaterization is developed. The test system is using a pulsed infrared laser for charge injection and characterization, called Laser Test System (LTS). The system is aimed to develop a set of characterization procedures which are non-invasive (non-destructive) in nature and could be used for quality assurances of several silicon micro-strip detectors in an efficient, reliable and reproducible way. The procedures developed (as reported here) uses the LTS to scan sensors with a pulsed infra-red laser driven by step motor to determine the charge sharing in-between strips and to measure qualitative uniformity of the sensor response over the whole active area. The prototype detector modules which are tested with the LTS so far have 1024 strips with a pitch of 58 mu m on each side. They are read-out using a self-triggering prototype read-out electronic ASIC called n-XYTER. The LTS is designed to measure sensor response in an automatized procedure at several thousand positions across the sensor with focused infra-red laser light (spot size approximate to 12 mu m, wavelength = 1060 nm). The pulse with a duration of approximate to 10 ns and power approximate to 5mW of the laser pulse is selected such, that the absorption of the laser light in the 300 mu m thick silicon sensor produces approximate to 24000 electrons, which is similar to the charge created by minimum ionizing particles (MIP) in these sensors. The laser scans different prototype sensors and various non-invasive techniques to determine characteristics of the detector modules for the quality assurance is reported.
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