HfO2/HfSixOy high-K gate stack with very low leakage current for low-power poly-Si gated CMOS application

被引：1

作者：

Yang, CW

Fang, YK ^{[1
]}

Chen, SF

Wang, MF

Hou, TH

Lin, YM

Yao, LG

Chen, SC

Liang, MS

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, VLSI Technol Lab, Tainan 70101, Taiwan

[2] Taiwan Semicond Mfg Co Ltd, Hsinchu, Taiwan

来源：

ELECTRONICS LETTERS | 2003年 / 39卷 / 08期

关键词：

D O I：

10.1049/el:20030445

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Poly-Si gated NMOSFETs, with HfO2/HfSixOy gate stacks for CMOS low-power application are reported for the first time. Compared to an SiO2 control sample, the HfO2/HfSixOy stack with equivalent oxide thickness of about 18 Angstrom exhibits four-orders of magnitude reduction in gate leakage at V-g = 1V Additionally, negligible hysteresis and comparable subthreshold swing are observed indicating good interface quality and bulk film properties. Furthermore, the stack-caused inherent transconductance degradation is small; almost 66% of the normalised peak transconductance with respect to SiO2 can be reached.

引用

页码：692 / 694

页数：3

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