EBIC characterization of light-emitting structures based on GaN

被引：9
|
作者：
Shmidt, N. M. [1 ]
Vergeles, P. S.
Yakimov, E. B.
机构：
[1] Russian Acad Sci, Ioffe Physicotech Inst, St Petersburg 194021, Russia
[2] Russian Acad Sci, Inst Microelect Technol, Chernogolovka 142432, Russia
来源：
SEMICONDUCTORS | 2007年 / 41卷 / 04期
基金：
俄罗斯基础研究基金会;
关键词：
D O I：
10.1134/S1063782607040264
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
EBIC investigations of light-emitting structures based on InGaN/GaN MQW with different numbers of wells have been carried out. A pronounced dependence of collection efficiency on quantum-well number is observed. A comparison with apparent carrier profiles calculated from C-V curves reveals a correlation between the collection efficiency and location of quantum well inside the depletion region. Defects producing bright EBIC contrast are revealed in the structure with five quantum wells. This contrast is associated with defects locally decreasing the excess carrier recombination inside quantum wells.
引用
收藏
页码：491 / 494
页数：4
相关论文
共 50 条
  • [1] EBIC characterization of light-emitting structures based on GaN
    N. M. Shmidt
    P. S. Vergeles
    E. B. Yakimov
    Semiconductors, 2007, 41 : 491 - 494
  • [2] EBIC Characterization of Light Emitting Structures Containing InGaN/GaN MQW
    Yakimov, E. B.
    MICROSCOPY OF SEMICONDUCTING MATERIALS 2007, 2008, 120 : 481 - 484
  • [3] Light-emitting diodes based on GaN
    Drizhuk, AG
    Zaitsev, MV
    Sidorov, VG
    Sidorov, DV
    COMPOUND SEMICONDUCTORS 1996, 1997, (155): : 401 - 404
  • [4] ON THE MECHANISM OF POLARIZED ELECTROLUMINESCENCE FROM LIGHT-EMITTING STRUCTURES BASED ON GAN
    LEBEDEV, YD
    FOK, MV
    SHAGALOV, MD
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1988, 108 (02): : 657 - 667
  • [5] Optically functional surface structures for GaN-based light-emitting diodes
    Ma, Ming
    Cho, Jaehee
    Schubert, E. Fred
    Kim, Gi Bum
    Sone, Cheolsoo
    JOURNAL OF MATERIALS CHEMISTRY C, 2013, 1 (48) : 8134 - 8139
  • [6] DIAMOND BASED LIGHT-EMITTING STRUCTURES
    BURCHARD, B
    ZAITSEV, AM
    FAHRNER, WR
    MELNIKOV, AA
    DENISENKO, AV
    VARICHENKO, VS
    DIAMOND AND RELATED MATERIALS, 1994, 3 (4-6) : 947 - 950
  • [7] Characterization of GaN nanowires and light-emitting devices based on a GaN nanowire-PVK nanocomposite
    Kim, M
    Jeon, BH
    Kim, JY
    Choi, JH
    SYNTHETIC METALS, 2003, 135 (1-3) : 743 - 744
  • [8] Thermophysical Characterization of Efficiency Droop in GaN-Based Light-Emitting Diodes
    Nee, Tzer-En
    Wang, Jen-Cheng
    Zhong, Bo-Yan
    Hsiao, Jui-Ju
    Wu, Ya-Fen
    NANOMATERIALS, 2021, 11 (06)
  • [9] GaN-Based Light-Emitting Diodes With Pillar Structures Around the Mesa Region
    Chen, P. H.
    Chang, Li Chuan
    Tsai, C. H.
    Lee, Y. C.
    Lai, Wei-Chih
    Wu, Mount-Learn
    Kuo, Cheng-Huang
    Sheu, Jinn-Kong
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 2010, 46 (07) : 1066 - 1071
  • [10] Simulation of GaN-based light-emitting devices
    Piprek, J
    SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 2004, 2004, : 101 - 108
12345