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The influence of SrTiO3/Si interface treatment by Sr and Ti on structural properties of SrTiO3 thin films

被引：0
|
作者：
Spanková, M
Chromik, S
Sedlácková, K
Vávra, I
Gazi, S
Kús, P
机构：
[1] Slovak Acad Sci, Inst Elect Engn, Bratislava 84239, Slovakia
[2] Comenius Univ, Fac Math Phys & Informat, Bratislava 84239, Slovakia
来源：
SOLID STATE CHEMISTRY V | 2003年 / 90-91卷
关键词：
SrTiO3; interface; silicon; crystallinity; transmission electron microscopy;
D O I：
10.4028/www.scientific.net/SSP.90-91.589
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
SrTiO3 thin films have been grown on Si (110) substrates by on-axis radio frequency magnetron sputtering. It is difficult to achieve epitaxial growth on Si because of the naturally oxidized Si surface. In order to reduce the oxide layer at the substrate-film interface, metallic Sr and Ti are deposited by thermal and electron beam evaporation, respectively. These metallic layers deoxidize the native oxide layer on the Si substrates. Using X-ray diffraction method and Transmission Electron Microscopy we study how the Sr and Ti layers with a thickness of about 10 nm influence the structural properties of the SrTiO3 thin films.
引用
收藏
页码：589 / 594
页数：6
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