Electrical Properties of SrTiO3 and SrTiO3/NiO Thin Films in Heterojunction Devices

被引：6
|
作者：
Das, Soumen
Liu, Daan
Choi, Chel-Jong
Hahn, Yoon-Bong
机构：
[1] Chonbuk Natl Univ, Dept BIN Fus Technol, Sch Semicond & Chem Engn, Jeonju 561756, South Korea
[2] Chonbuk Natl Univ, Nanomat Proc Res Ctr, Jeonju 561756, South Korea
来源：
SCIENCE OF ADVANCED MATERIALS | 2014年 / 6卷 / 08期
基金：
新加坡国家研究基金会;
关键词：
SrTiO3; Band Offset; Schottky Diode; Interfacial Barrier Height; DIELECTRIC-PROPERTIES; MEMORY APPLICATIONS; LEAKAGE CURRENT; VISIBLE-LIGHT; HETEROSTRUCTURES; STOICHIOMETRY; PHOTOCATALYST; TRANSISTORS; ELECTRODE; LAYER;
D O I：
10.1166/sam.2014.1961
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The temperature-dependent electrical properties of solution-processed SrTiO3 (STO) and NiO/STO thin films in heterojunction devices were investigated at 50-150 degrees C. The band offsets were measured by XPS through the core level (CL) binding energy peak positions of Sr3d, Ti2p, Ni2p and O1s. Diode like features in current (I)-voltage (V) response indicated interface-limited Schottky emission as the calculated optical dielectric constants, 4.11 for STO and 6.26 for NiO. The interfacial potential barrier height at zero bias was similar to 0.30 eV for both Si/Pt/STO/Pt and Si/PYSTO/NiO/Pt assemblies, indicating that reduction of leakage current owes it to the large conduction and valence band offset of similar to 2.02 and 2.17 eV, respectively.
引用
收藏
页码：1888 / 1891
页数：4
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