Enhanced field emission of well-aligned ZnO nanowire arrays illuminated by UV

被引：39

作者：

Chen, Chih-Han ^{[2
]}

Chang, Shoou-Jinn ^{[2
,3
]}

Chang, Sheng-Po ^{[2
,3
]}

Tsai, Yao-Ching ^{[1
]}

Chen, I-Cherng ^{[4
]}

Hsueh, Ting-Jen ^{[5
]}

Hsu, Cheng-Liang ^{[1
]}

机构：

[1] Natl Univ Tainan, Dept Elect Engn, Tainan 700, Taiwan

[2] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan

[3] Natl Cheng Kung Univ, Dept Elect Engn, Adv Optoelect Technol Ctr, Ctr Micro Nano Sci & Technol, Tainan 70101, Taiwan

[4] Microsyst Technol Ctr, Ind Technol Res Inst S, Tainan 709, Taiwan

[5] Natl Nanodevice Labs, Tainan 741, Taiwan

来源：

CHEMICAL PHYSICS LETTERS | 2010年 / 490卷 / 4-6期

关键词：

D O I：

10.1016/j.cplett.2010.03.033

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Vertical zinc oxide nanowires, used as electron emitters, were synthesized on ZnO:Ga/glass substrate by a vapor-liquid-solid process without a catalyst. The nanowires, 5 mu m long and 50-250 nm in diameter, were grown with a preferred (0 0 2) orientation and a small XRD full-width at half-maximum intensity. Illumination of ZnO nanowires by UV improved their field emission attributes, reducing their turn-on electric field to 2.1 V/mu m at a current density of 1 mu A/cm(2). This phenomenon is attributed to the generation of a large number of hole-electron pairs by UV illumination. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：176 / 179

页数：4

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