Structural and Optoelectronic Characteristics of Well-Aligned ZnO Nanorod Arrays for Photodiodes

被引：3

作者：

Ji, Liang-Wen ^{[1
]}

Fang, Te-Hua ^{[1
,2
,3
]}

Wu, Cheng-Zhi ^{[1
]}

Chu, Tung-Te ^{[4
]}

Jiang, Huilin ^{[4
]}

Chang, Shoou-Jinn ^{[5
,6
]}

Peng, Shi-Ming ^{[5
,6
]}

Zhong, Jingchang ^{[4
]}

Chang, Wen-Yang ^{[7
]}

机构：

[1] Natl Formosa Univ, Inst Electroopt & Mat Sci, Yunlin 632, Taiwan

[2] Natl Kaohsiung Univ Appl Sci, Dept Mech Engn, Kaohsiung 807, Taiwan

[3] Natl Kaohsiung Univ Appl Sci, Inst Mech & Precis Engn, Kaohsiung 807, Taiwan

[4] Changchun Univ Sci & Technol, Natl Key Lab High Power Semicond Laser, Changchun 130022, Peoples R China

[5] Natl Cheng Kung Univ, Inst Microelect, Tainan 701, Taiwan

[6] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 701, Taiwan

[7] Natl Formosa Univ, Dept Mech & Comp Aided Engn, Yunlin 632, Taiwan

来源：

JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS | 2010年 / 5卷 / 03期

关键词：

ZnO; Nanorod; Liquid-Phase-Deposition; Photodiodes; Photoluminescence; ZINC-OXIDE NANOWIRES; NANOPARTICLES; DEPOSITION; GROWTH; FILMS;

D O I：

10.1166/jno.2010.1113

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Structural and optoelectronic characteristics of the well-aligned ZnO nanorod arrays were achieved by means of X-ray diffraction, scanning electron microscopy, transmission electron microscopy, photoluminescence (PL) and micro-Raman spectroscopy. The results indicated that the well-aligned ZnO nanorod with wurtzite structure was preferred oriented in the [002] c-axis direction. ZnO nanorod-based Schottky-barrier photodiodes has been also fabricated and characterized. With an incident wavelength of 370 nm and 5 V applied bias, it was found that maximum photoresponsivity of the photodiode was 0.051 A/W, which corresponded to a quantum efficiency of 21%.

引用

页码：295 / 299

页数：5

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