Composition determination of Si/Si1-xGex/Si by photoreflectance spectroscopy

被引：3
|
作者：
Chen, CC [1 ]
Kelly, PV [1 ]
Liu, ZH [1 ]
Huang, WT [1 ]
Dou, WZ [1 ]
Tsien, PH [1 ]
机构：
[1] Tsing Hua Univ, Inst Microelect, Beijing 100084, Peoples R China
来源：
METALS AND MATERIALS INTERNATIONAL | 2004年 / 10卷 / 05期
关键词：
SiGe/Si; photoreflectance; UHVCVD;
D O I：
10.1007/BF03027354
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
UHVCVD-grown Si/Si1-xGex/Si heterostructure is investigated by photoreflectance spectroscopy (PR). The principle of PR in determining Ge content of a Si1-xGex epilayer is thoroughly described. The unambiguous E-1 transition energy in the Si1-xGex epilayer is very useful to determine Ge content during PR analysis. R&R study with 10 repeats at the same point indicates that the measurements of PR are reproducible. These results demonstrate that PR is very promising for analysis of Si1-xGex epilayer characterization with constant Ge content.
引用
收藏
页码：489 / 492
页数：4
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