Electron localization by self-assembled GaSb/GaAs quantum dots

被引：59
|
作者：
Hayne, M
Maes, J
Bersier, S
Moshchalkov, VV
Schliwa, A
Müller-Kirsch, L
Kapteyn, C
Heitz, R
Bimberg, D
机构：
[1] Katholieke Univ Leuven, Lab Vaste Stoffys Magnetisme, B-3001 Louvain, Belgium
[2] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
来源：
APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 24期
关键词：
D O I：
10.1063/1.1583853
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have studied the photoluminescence from type-II GaSb/GaAs self-assembled quantum dots in magnetic fields up to 50 T. Our results show that at low laser power, electrons are more weakly bound to the dots than to the wetting layer, but that at high laser power, the situation is reversed. We attribute this effect to an enhanced Coulomb interaction between a single electron and dots that are multiply charged with holes. (C) 2003 American Institute of Physics.
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页码：4355 / 4357
页数：3
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