Anisotropy of the electron Lande g factor in InAs/GaAs self-assembled quantum dots

被引:2
|
作者
Testelin, C. [1 ,2 ]
Aubry, E. [1 ,2 ]
Eble, B. [1 ,2 ]
Bernardot, F. [1 ,2 ]
Chamarro, M. [1 ,2 ]
Lemaitre, A. [3 ]
机构
[1] Univ Paris 06, Inst NanoSci Paris, CNRS, UMR 7588, F-75015 Paris, France
[2] Univ Paris 07, Inst NanoSci Paris, CNRS, UMR 7588, F-75015 Paris, France
[3] CNRS, Lab Photon & Nanostruct, F-91460 Marcoussis, France
来源
关键词
InAs/GaAs quantum dots; optical ps pump-probe experiments; electron Lande g factor;
D O I
10.1016/j.physe.2007.09.107
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We report on,the precise determination of the electron Lande g factor and its anisotropy in self-assembled InAs/GaAs quantum dots (QDs), by means of measurements of Larmor precession frequencies in photoinduced circular dichroism (PCD) experiments performed with an oblique magnetic field. This optical technique, applied to an ensemble of QDs, is able to measure the electronic g factor corresponding to ground-state electrons resident in QDs emitting at a given energy of fundamental optical transition. In good agreement with recent theoretical results, we measure vertical bar g(perpendicular to)vertical bar = 0.397 +/- 0.003 and vertical bar g(parallel to)vertical bar = 0.18 +/- 0.02 for QDs emitting at 1.32eV. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:2072 / 2074
页数:3
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