Three-dimensional simulations of field emission through an oscillating barrier from a (10,0) carbon nanotube

被引:15
|
作者
Mayer, A
Miskovsky, NM
Cutler, PH
机构
[1] Fac Univ Notre Dame Paix, Lab Phys Solide, B-5000 Namur, Belgium
[2] Penn State Univ, Dept Phys, Davey Lab 104, University Pk, PA 16802 USA
来源
关键词
D O I
10.1116/1.1524138
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present three-dimensional simulations of field emission through an oscillating barrier from an. ideal open (10,0) carbon nanotube without adsorption by using a transfer-matrix methodology. By introducing pseudopotentials for the representations of carbon atoms and by repeating periodically a basic unit of the nanotube, band-structure effects are manifested in the distributions of energies. The total-energy distribution of the emitted electrons present features which are related essentially to the gap of the semiconducting (10,0) nanotube and to stationary waves in the structure. The current enhancement due to photon-stimulation reaches a saturation plateau for photon energies larger than 5 eV and decreases for high energies. Maximal enhancement is achieved at a photon energy around 8 eV, one electron being then emitted for every 20 photons crossing the nanotube. (C) 2003 American Vacuum Society.
引用
收藏
页码:395 / 399
页数:5
相关论文
共 50 条
  • [21] Vibration and instability of a single-walled carbon nanotube in a three-dimensional magnetic field
    Kiani, Keivan
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2014, 75 (01) : 15 - 22
  • [22] Three-dimensional simulation studies on electrostatic predictions for carbon nanotube field effect transistors
    Chen, P. -Y.
    Shao, Y. -L.
    Cheng, K. -W.
    Hsu, K. -H.
    Wu, J. -S.
    Ju, J. -P.
    COMPUTER PHYSICS COMMUNICATIONS, 2007, 177 (09) : 683 - 688
  • [23] A three-dimensional simulation of electrostatic characteristics for carbon nanotube array field effect transistors
    Li, YM
    Chou, HM
    Lee, JW
    Lee, BS
    MICROELECTRONIC ENGINEERING, 2005, 81 (2-4) : 434 - 440
  • [24] Carbon-Nanotube Through-Silicon Via Interconnects for Three-Dimensional Integration
    Wang, Teng
    Jeppson, Kejll
    Ye, Lilei
    Liu, Johan
    SMALL, 2011, 7 (16) : 2313 - 2317
  • [25] Aligned carbon nanotube array stiffness from stochastic three-dimensional morphology
    Stein, Itai Y.
    Lewis, Diana J.
    Wardle, Brian L.
    NANOSCALE, 2015, 7 (46) : 19426 - 19431
  • [26] Integrated three-dimensional microelectromechanical devices from processable carbon nanotube wafers
    Hayamizu, Yuhei
    Yamada, Takeo
    Mizuno, Kohei
    Davis, Robert C.
    Futaba, Don N.
    Yumura, Motoo
    Hata, Kenji
    NATURE NANOTECHNOLOGY, 2008, 3 (05) : 289 - 294
  • [27] Integrated three-dimensional microelectromechanical devices from processable carbon nanotube wafers
    Yuhei Hayamizu
    Takeo Yamada
    Kohei Mizuno
    Robert C. Davis
    Don N. Futaba
    Motoo Yumura
    Kenji Hata
    Nature Nanotechnology, 2008, 3 : 289 - 294
  • [28] CHANGE OF THE ELECTRONIC CONDUCTIVITY OF CARBON NANOTUBE AND GRAPHENE SHEETS CAUSED BY A THREE-DIMENSIONAL STRAIN FIELD
    Ohnishi, Masato
    Suzuki, Yusuke
    Ohashi, Yusuke
    Suzuki, Ken
    Miura, Hideo
    PROCEEDINGS OF THE ASME PACIFIC RIM TECHNICAL CONFERENCE AND EXHIBITION ON PACKAGING AND INTEGRATION OF ELECTRONIC AND PHOTONIC SYSTEMS, MEMS AND NEMS 2011, VOL 1, 2012, : 457 - 462
  • [29] Numerical analysis in focusing characteristics of the three-dimensional trapezoidal electrodes for carbon nanotube field emitters
    Zang, Faheng
    Ding, Guifu
    Wang, Yan
    Deng, Min
    VACUUM, 2010, 85 (01) : 48 - 54
  • [30] Electrical Modeling of Carbon Nanotube Based Through-Silicon Vias for Three-dimensional ICs
    Zheng, J.
    Gao, X.
    Zhao, W. -S.
    Wang, G.
    2016 PROGRESS IN ELECTROMAGNETICS RESEARCH SYMPOSIUM (PIERS), 2016, : 2594 - 2597