Control of wavelength and decay time of photoluminescence for InAs quantum dots grown on InP(311)B using the digital embedding method

被引：0
|
作者：
Akahane, Kouichi [1 ]
Yamamoto, Naokatsu [1 ]
Umezawa, Toshimasa [1 ]
Kawanishi, Tetsuya [1 ]
Tanaka, Takehiro [2 ]
Nakamura, Shin-Ichi [2 ]
Sotobayashi, Hideyuki [2 ]
机构：
[1] Natl Inst Informat & Commun Technol, 4-2-1 Nukui Kitamachi, Koganei, Tokyo 1848795, Japan
[2] Aoyama Gakuin Univ, 5-10-1 Fuchinobe, Sagamihara, Kanagawa 2298558, Japan
来源：
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2016年 / 253卷 / 04期
关键词：
InAs; InP; molecular beam epitaxy; photoluminescence; quantum dots; superlattices; FABRICATION; LASER;
D O I：
10.1002/pssb.201552483
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A lattice-matched InGaAs and InAlAs superlattice (SL) was used to embed InAs quantum dots (QDs) on an InP(311)B substrate; this is called the digital embedding method (DEM). We controlled the emission wavelength of the InAs QDs by changing the period of the SL or the ratio of the thickness of InGaAs to that of InAlAs. In addition, we investigated the time-resolved photoluminescence (PL) of the InAs QDs using the DEM. The decay time of the PL from the QDs was estimated by fitting a single exponential curve and was 380ps in the DEM sample and 700ps in the reference sample with a conventional InGaAlAs barrier. The decay time was clearly altered by changing the embedding structure. Therefore, carrier dynamics could be controlled using the DEM.
引用
收藏
页码：640 / 643
页数：4
相关论文
共 50 条
  • [31] Wavelength tuning of InAs/InP quantum dots:: Control of As/P surface exchange reaction
    Notzel, R.
    Anantathanasarn, S.
    van Veldhoven, P. J.
    van Otten, F. W. M.
    Eijkemans, T. J.
    Trampert, A.
    Satpati, B.
    Wolter, J. H.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2006, 24 (04): : 2075 - 2079
  • [32] Achievement of high density InAs quantum dots on InP (311)B substrate emitting at 1.55 μm
    Caroff, P
    Bertru, N
    Le Corre, A
    Dehaese, O
    Rohel, T
    Alghoraibi, I
    Folliot, H
    Loualiche, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (33-36): : L1069 - L1071
  • [33] Achievement of high density InAs quantum dots on InP (311)B substrate emitting at 1.55 μm
    Caroff, P., 1600, Japan Society of Applied Physics (44): : 33 - 36
  • [34] Room temperature laser emission of 1.5 μm from InAs/InP(311)B quantum dots
    Paranthoen, C
    Bertru, N
    Lambert, B
    Dehaese, O
    Le Corre, A
    Even, J
    Loualiche, S
    Lissillour, F
    Moreau, G
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2002, 17 (02) : L5 - L7
  • [35] Wavelength extension beyond 1.5μm in symmetric InAs quantum dots grown on InP(111)A using droplet epitaxy
    Ha, Neul
    Mano, Takaaki
    Wu, Yu-Nien
    Ou, Ya-Wen
    Cheng, Shun-Jen
    Sakuma, Yoshiki
    Sakoda, Kazuaki
    Kuroda, Takashi
    APPLIED PHYSICS EXPRESS, 2016, 9 (10)
  • [36] Laser Characteristic and Strain Distribution Dependence on Embedding Layer Thickness of Quantum Dots Laser Diodes Grown on InP(311)B Substrate
    Matsumoto, Atsushi
    Akahane, Kouichi
    Umezawa, Toshimasa
    Nakajima, Shinya
    Yamamoto, Naokatsu
    Kanno, Atsushi
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2022, 219 (04):
  • [37] Wide bandgap wavelength control of InAs/InP quantum dots array waveguides by selective MOVPE
    Akaishi, M.
    Yamauchi, Y.
    Okawa, T.
    Saito, Y.
    Yoshida, J.
    Shimomura, K.
    2007 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2007, : 174 - 177
  • [38] Photoluminescence decay time measurements from self-organized InAs/GaAs quantum dots
    Buckle, PD
    Dawson, P
    Hall, SA
    Chen, X
    Steer, MJ
    Mowbray, DJ
    Skolnick, MS
    Hopkinson, M
    JOURNAL OF APPLIED PHYSICS, 1999, 86 (05) : 2555 - 2561
  • [39] The photoluminescence decay time of self-assembled InAs quantum dots covered by InGaAs layers
    Shu, G. W.
    Wang, C. K.
    Wang, J. S.
    Shen, J. L.
    Hsiao, R. S.
    Chou, W. C.
    Chen, J. F.
    Lin, T. Y.
    Ko, C. H.
    Lai, C. M.
    NANOTECHNOLOGY, 2006, 17 (23) : 5722 - 5725
  • [40] Intermixing of Highly-Stacked InAs/InGaAlAs Quantum Dots Grown on InP (311)B Substrate by SiO2 Sputtering and Annealing Technique
    Matsushita, A.
    Matsumoto, A.
    Akahane, K.
    Matsushima, Y.
    Utaka, K.
    2013 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM), 2013,
12345