A Wide-Range, High-Voltage, Floating Level Shifter with Charge Refreshing in a Standard 180 nm CMOS Process

被引：2
|
作者：
Palomeque-Mangut, David [1 ]
Rodriguez-Vazquez, Angel [1 ]
Delgado-Restituto, Manuel [1 ]
机构：
[1] Univ Seville, Inst Microelect Sevilla IMSE CNM, CSIC, Seville, Spain
来源：
2022 IEEE 13TH LATIN AMERICAN SYMPOSIUM ON CIRCUITS AND SYSTEMS (LASCAS) | 2022年
关键词：
Floating level shifter; high voltage compliance; charge pump; LV CMOS; CHIP;
D O I：
10.1109/LASCAS53948.2022.9789044
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A high-voltage (HV) floating level shifter which slides digital signals by varying the low supply rail from ground to VSSH while preserving the input signal swing is proposed. The cell is based on a periodically-refreshed charge pump circuit and it is suitable for non-HV CMOS processes. Input signals can be non-periodic. The circuit has been designed and implemented in a standard 180nm 1.8V/3.3V CMOS node, occupying 0.02mm(2). Post-layout simulations show that VSSH voltage can safely range from 0.5V to 9.5V. The delay response of the circuit is 1.9 ns and it consumes 13.9 mu W.
引用
收藏
页码：109 / 112
页数：4
相关论文
共 50 条
  • [11] A Novel Floating High-Voltage Level Shifter with Pre-Storage Technique
    Li, Qiang
    Yang, Yuan
    Ma, Haohao
    Zhou, Yangle
    You, Guolong
    Zhang, Minmin
    Xiang, Wei
    SENSORS, 2022, 22 (05)
  • [12] WIDE-RANGE HIGH-VOLTAGE CAPACITANCE BRIDGE WITH ONE PPM ACCURACY
    PETERSONS, O
    ANDERSON, WE
    IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, 1975, 24 (04) : 336 - 344
  • [13] A High-resolution, Wide-range, Radiation-hard Clock Phase-shifter in a 65 nm CMOS Technology
    Kulis, Szymon
    Yang, Dongxu
    Ghong, Datao
    Fonseca, Jose
    Biereigel, Stefan
    Ye, Jingbo
    Moreira, Paulo
    PROCEEDINGS OF THE 2019 26TH INTERNATIONAL CONFERENCE MIXED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS (MIXDES 2019), 2019, : 147 - 150
  • [14] High-Voltage Generation With Stacked Photodiodes in Standard CMOS Process
    Law, M. K.
    Bermak, A.
    IEEE ELECTRON DEVICE LETTERS, 2010, 31 (12) : 1425 - 1427
  • [15] A Floating High-Voltage Level Shifter Used in A Pre-charge Circuit for Large-size AMOLED Displays
    Yang, Fangfang
    Wang, Cuicui
    Lam, Hing-Mo
    Zhao, Qiang
    Fan, Jia
    Zhang, Shengdong
    2016 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2016, : 267 - 270
  • [16] A Low Power High-Voltage Floating Output Level Shifter with Asymmetric Delay Reduction
    Cheng, Qianxi
    Tao, Linzhi
    He, Jiaojiao
    Yang, Jie
    Zhang, Chen
    Wang, Xin'an
    2024 IEEE 67TH INTERNATIONAL MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS, MWSCAS 2024, 2024, : 1362 - 1366
  • [17] A Regulated Temperature-Insensitive High-Voltage Charge Pump in Standard CMOS Process for Micromachined Gyroscopes
    Li, Xiang
    Li, Rui
    Ju, Chunge
    Hou, Bo
    Wei, Qi
    Zhou, Bin
    Chen, Zhiyong
    Zhang, Rong
    SENSORS, 2019, 19 (19)
  • [18] A Low-Power Wide-Range Voltage Level Shifter Using a Modified Wilson Current Mirror
    Talebzadeh, Ala
    Saberi, Mehdi
    2016 24TH IRANIAN CONFERENCE ON ELECTRICAL ENGINEERING (ICEE), 2016, : 1363 - 1366
  • [19] Ultra-Low Dark Count Rate SPAD Fully Integrated in a 180 nm High-Voltage CMOS Process
    Pozar, Borna
    Berdalovic, Ivan
    Knezevic, Tihomir
    Suligoj, Tomislav
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2024, 36 (20) : 1241 - 1244
  • [20] A high speed, low voltage to high voltage level shifter in standard 1.2 V 0.13 μm CMOS
    Serneels, Bert
    Steyaert, Michiel
    Dehaene, Wim
    ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING, 2008, 55 (01) : 85 - 91
12345