Arsenic incorporation in GaN during growth by molecular beam epitaxy

被引：6
|
作者：
Foxon, CT [1 ]
Novikov, SV
Li, T
Campion, RP
Winser, AJ
Harrison, I
Kappers, MJ
Humphreys, CJ
机构：
[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England
[2] Univ Nottingham, Sch Elect & Elect Engn, Nottingham NG7 2RD, England
[3] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB2 3QZ, England
来源：
JOURNAL OF CRYSTAL GROWTH | 2003年 / 251卷 / 1-4期
关键词：
molecular beam epitaxy; nitrides; semiconducting III-V materials;
D O I：
10.1016/S0022-0248(02)02243-1
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We have studied arsenic incorporation in GaN films grown by plasma-assisted molecular beam epitaxy. Depending on the growth conditions, arsenic in GaN either produces blue emission or GaNAs alloy formation occurs. A general growth model is proposed. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：510 / 514
页数：5
相关论文
共 50 条
  • [41] The investigation of molecular beam epitaxy growth of GaN by molecular dynamics simulation
    Liang, Kang
    Sun, Xiang
    Wu, Gai
    Zhang, Libin
    Liu, Sheng
    Gan, Zhiyin
    COMPUTATIONAL MATERIALS SCIENCE, 2020, 173
  • [42] Accurate method to determine the growth conditions during molecular beam epitaxy of cubic GaN
    Universitaet-GH Paderborn, Paderborn, Germany
    Mater Sci Forum, pt 2 (1173-1176):
  • [43] Unintentional incorporation of B, As, and O impurities in GaN grown by molecular beam epitaxy
    Kim, H
    Fälth, FJ
    Andersson, TG
    JOURNAL OF ELECTRONIC MATERIALS, 2001, 30 (10) : 1343 - 1347
  • [44] Mn incorporation in GaN thin layers grown by molecular-beam epitaxy
    Kocan, M.
    Malindretos, J.
    Roever, M.
    Zenneck, J.
    Niermann, T.
    Mai, D.
    Bertelli, M.
    Seibt, M.
    Rizzi, A.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2006, 21 (09) : 1348 - 1353
  • [45] Unintentional incorporation of B, As, and O impurities in GaN grown by molecular beam epitaxy
    Hyonju Kim
    Fredrik J. Fälth
    Thorvald G. Andersson
    Journal of Electronic Materials, 2001, 30 : 1343 - 1347
  • [46] Incorporation of Mg in GaN grown by plasma-assisted molecular beam epitaxy
    Namkoong, G
    Doolittle, WA
    Brown, AS
    APPLIED PHYSICS LETTERS, 2000, 77 (26) : 4386 - 4388
  • [47] Incorporation-related structural issues for beryllium doping during growth of GaN by rf-plasma molecular-beam epitaxy
    Ptak, AJ
    Wang, LJ
    Giles, NC
    Myers, TH
    Romano, LT
    Tian, C
    Hockett, RA
    Mitha, S
    Van Lierde, P
    APPLIED PHYSICS LETTERS, 2001, 79 (27) : 4524 - 4526
  • [48] Buffer layers for the growth of GaN on sapphire by molecular beam epitaxy
    Ebel, R
    Fehrer, M
    Figge, S
    Einfeldt, S
    Selke, H
    Hommel, D
    JOURNAL OF CRYSTAL GROWTH, 1999, 201 : 433 - 436
  • [49] Mechanism for spontaneous growth of GaN nanowires with molecular beam epitaxy
    Bertness, K. A.
    Roshko, A.
    Mansfield, L. M.
    Harvey, T. E.
    Sanford, N. A.
    JOURNAL OF CRYSTAL GROWTH, 2008, 310 (13) : 3154 - 3158
  • [50] GaN substrates for molecular beam epitaxy growth of homoepitaxial structures
    Grzegory, I
    Porowski, S
    THIN SOLID FILMS, 2000, 367 (1-2) : 281 - 289
12345