Synthesis and electron field emission properties of nanodiamond films

被引:20
|
作者
Lee, YC
Lin, SJ
Chia, CT
Cheng, HF
Lin, IN
机构
[1] Tamkang Univ, Dept Phys, Tamsui 251, Taiwan
[2] Natl Taiwan Normal Univ, Dept Phys, Taipei 106, Taiwan
[3] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan
关键词
nanodiamond; BEN; BEG; electron field emission;
D O I
10.1016/j.diamond.2004.06.021
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Effects of CH4/H-2 ratio and bias voltage of the microwave plasma-enhanced chemical vapor deposition (MPE-CVD) process on the nucleation behavior and associated characteristics of nanodiamonds were investigated. While the scanning electron microscopy (SEM) microstructure and Raman crystal structure of the films insignificantly vary with CH4/H-2 ratio and bias voltage, electron field emission properties of the materials markedly change with these deposition parameters. The predominating factor moditing the electron field emission properties of the nanodiamond films is presumed to be the increase in the proportion of sp(2)-bonded grain boundaries when the grain size of the nanodiamond films decreases. Between these two major factors, the bias voltage shows more prominent effects on modifying the granular structure of the nanodiamonds than the CH4/H-2 ratio does. The best electron field emission properties attainable are J(e)=500 muA/cm(2) at 20 V/mum and E-0=8.5 V/mum. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:2100 / 2104
页数:5
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