Electroluminescence of injection lasers based on vertically coupled quantum dots near the lasing threshold

被引：0
|
作者：
Gordeev, NY [1 ]
Zaitsev, SV
Karachinsky, LY
Kopchatov, VI
Novikov, II
Ustinov, VM
Kop'ev, PS
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
[2] Nova Crystals Inc, San Jose, CA 95131 USA
来源：
SEMICONDUCTORS | 2003年 / 37卷 / 01期
关键词：
D O I：
10.1134/1.1538549
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Electroluminescence spectroscopy has been used in a wide range of temperatures (77-300 K) and driving current densities to study a laser heterostructure based on vertically coupled self-assembled InGaAs quantum dots (QD). It has been found that lasing occurs via the QD ground state in the entire temperature range. The temperature-independent position of the emission peak corresponding to the second excited state in QDs is explained. (C) 2003 MAIK "Nauka/Interperiodica".
引用
收藏
页码：112 / 114
页数：3
相关论文
共 50 条
  • [31] Vertically coupled double quantum dots in magnetic fields
    Imamura, H
    Maksym, PA
    Aoki, H
    PHYSICAL REVIEW B, 1999, 59 (08): : 5817 - 5825
  • [32] Lateral association of vertically-coupled quantum dots
    Tsatsul'nikov, AF
    Belousov, MV
    Bert, NA
    Egorov, AY
    Kop'ev, PS
    Kovsh, AR
    Krestnikov, IL
    Ledentsov, NN
    Maximov, MV
    Suvorova, AA
    Ustinov, VM
    Volovik, BV
    Zhukov, AE
    Grundmann, M
    Bimberg, D
    Alferov, ZI
    MICROELECTRONIC ENGINEERING, 1998, 43-4 : 37 - 43
  • [33] Two vertically coupled quantum dots in a magnetic field
    Partoens, B
    Peeters, FM
    PHYSICA B, 2001, 298 (1-4): : 282 - 286
  • [34] Gain in injection lasers based on self-organized quantum dots
    A. R. Kovsh
    A. E. Zhukov
    A. Yu. Egorov
    V. M. Ustinov
    N. N. Ledentsov
    M. V. Maksimov
    A. F. Tsatsul’nikov
    P. S. Kop’ev
    Semiconductors, 1999, 33 : 184 - 191
  • [35] Gain in injection lasers based on self-organized quantum dots
    Kovsh, AR
    Zhukov, AE
    Egorov, AY
    Ustinov, VM
    Ledentsov, NN
    Maksimov, MV
    Tsatsul'nikov, AF
    Kop'ev, PS
    SEMICONDUCTORS, 1999, 33 (02) : 184 - 191
  • [36] Polarization control of electroluminescence from vertically stacked InAs/GaAs quantum dots
    Inoue, Tomoya
    Asada, Masaki
    Yasuoka, Nami
    Kojima, Osamu
    Kita, Takashi
    Wada, Osamu
    APPLIED PHYSICS LETTERS, 2010, 96 (21)
  • [37] Lasing in compact injection microdisks with InAs/InGaAs quantum dots
    Kryzhanovskaya, N. V.
    Moiseev, E. I.
    Kulagina, M. M.
    Guseva, Y.
    Zadiranov, Yu. M.
    Maximov, M. V.
    Lipovskii, A. A.
    Afinogenov, B. I.
    Nasibulin, A. G.
    Zhukov, A. E.
    2018 INTERNATIONAL CONFERENCE LASER OPTICS (ICLO 2018), 2018, : 129 - 129
  • [38] Near threshold regime in quantum well lasers
    Ribeiro, AL
    Fernandes, CF
    MELECON '96 - 8TH MEDITERRANEAN ELECTROTECHNICAL CONFERENCE, PROCEEDINGS, VOLS I-III: INDUSTRIAL APPLICATIONS IN POWER SYSTEMS, COMPUTER SCIENCE AND TELECOMMUNICATIONS, 1996, : 428 - 431
  • [39] Low threshold lasing of GaN-based vertical cavity surface emitting lasers with an asymmetric coupled quantum well active region
    Zhang, Jiang-Yong
    Cai, Li-E
    Zhang, Bao-Ping
    Li, Shui-Qing
    Lin, Feng
    Shang, Jing-Zhi
    Wang, Du-Xiang
    Lin, Ke-Chuang
    Yu, Jin-Zhong
    Wang, Qi-Ming
    APPLIED PHYSICS LETTERS, 2008, 93 (19)
  • [40] Vertically coupled double-microdisk lasers composed of InGaAs quantum dots-in-a-well active layers
    Hsing, J. Y.
    Tzeng, T. E.
    Lay, T. S.
    Shih, M. H.
    JOURNAL OF APPLIED PHYSICS, 2017, 121 (20)
12345