Gain in injection lasers based on self-organized quantum dots

被引：0
|
作者：
A. R. Kovsh
A. E. Zhukov
A. Yu. Egorov
V. M. Ustinov
N. N. Ledentsov
M. V. Maksimov
A. F. Tsatsul’nikov
P. S. Kop’ev
机构：
[1] Russian Academy of Sciences,A. F. Ioffe Physicotechnical Institute
来源：
Semiconductors | 1999年 / 33卷
关键词：
Experimental Data; Excited State; Theoretical Model; Active Region; Magnetic Material;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The analytical form of the dependence of the gain on pump current density for lasers with an active region based on self-organized quantum dots is derived in a simple theoretical model. The proposed model is shown to faithfully describe experimental data obtained for laser diodes based on InGaAs quantum dots in an AlGaAs/GaAs matrix, as well as InAs quantum dots in an InGaAs/InP matrix. The previously observed gain saturation and switching of the lasing from the ground state to an excited state of the quantum dots are studied. The influence of the density of quantum-dot arrays on the threshold characteristics of lasers based on them is examined on the basis of this model.
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页码：184 / 191
页数：7
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