Characterization of ionizing radiation effects in MOS structures by bipolar operation study

被引：0

作者：

Bakhtiar, H ^{[1
]}

Picard, C ^{[1
]}

Brisset, C ^{[1
]}

Hoffmann, A ^{[1
]}

Mialhe, P ^{[1
]}

Charles, JP ^{[1
]}

机构：

[1] Univ Teknol Malaysia, Dept Phys, Johor 80990, Malaysia

来源：

FIFTH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS | 1999年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work presents a method to characterize transistors of submicronic dimensions. The study of the substrate-drain junction of transistors before and after irradiation shows that irradiation induces junction electrical parameters changes clue to surface potential action on space-charge region Variations of the current gain of the bipolar transistor (drain-substrate-source as emitter-base-collector) for different gate voltages are analyzed and compared to dose effects on the oxide.

引用

页码：548 / 553

页数：6

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