A large-signal physical HEMT model

被引:0
|
作者
Morton, CG [1 ]
Atherton, JS [1 ]
Snowden, CM [1 ]
Pollard, RD [1 ]
Howes, MJ [1 ]
机构
[1] UNIV LEEDS,DEPT ELECTR & ELECT ENGN,LEEDS LS2 9JT,W YORKSHIRE,ENGLAND
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1759 / 1762
页数:4
相关论文
共 50 条
  • [31] A large-signal characterization of an HEMT using a multilayered neural network
    Shirakawa, K
    Shimiz, M
    Okubo, N
    Daido, Y
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1997, 45 (09) : 1630 - 1633
  • [32] Dedicated Large-Signal GaN HEMT Model for Switching-Mode Circuit Analysis and Design
    Aflaki, Pouya
    Negra, Renato
    Ghannouchi, Fadhel M.
    IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2009, 19 (11) : 740 - 742
  • [33] An accurate large-signal physical model for microwave GaAs/AlGaAs HBTs
    Henderson, GN
    INTERNATIONAL JOURNAL OF MICROWAVE AND MILLIMETER-WAVE COMPUTER-AIDED ENGINEERING, 1996, 6 (03): : 153 - 165
  • [34] A triple channel HEMT on InP (Camel HEMT) for large-signal high-speed applications
    Maher, H
    Décobert, J
    Falcou, A
    Le Pallec, M
    Post, G
    Nissim, YI
    Scavennec, A
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (01) : 32 - 37
  • [35] Large-signal HEMT modelling, specifically optimized for INP based HEMTs
    Schreurs, D
    Baeyens, Y
    vanderZanden, K
    Verspecht, J
    VanHove, M
    DeRaedt, W
    Nauwelaers, B
    VanRossum, M
    1996 EIGHTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, 1996, : 638 - 641
  • [36] A novel large-signal GaN HEMT modeling based on harmonic mean
    Fang, Heng
    Chen, Yang
    Liang, Yan
    Zhang, Yong
    Xu, Yuehang
    Xu, Ruimin
    Yan, Bo
    MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2023, 65 (12) : 3221 - 3227
  • [37] Dual-Gate Switch-HEMT Large-Signal Modeling
    Hu, Zhifu
    Tao, Yuan
    He, MeiLin
    Liu, YaNan
    Zhang, Qijun
    PROCEEDINGS OF THE 2019 IEEE ASIA-PACIFIC MICROWAVE CONFERENCE (APMC), 2019, : 219 - 221
  • [38] Automatic large-signal GaAs HEMT modeling for power amplifier design
    Popov, Artyom
    Bilevich, Dmitry
    Salnikov, Andrei
    Dobush, Igor
    Goryainov, Aleksandr
    Kalentyev, Alexey
    AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS, 2019, 100 : 138 - 143
  • [39] Smoothing the canonical piecewise-linear model:: An efficient and derivable large-signal model for MESFET/HEMT transistors
    Lázaro, M
    Santamaría, I
    Pantaleón, C
    Sánchez, AM
    Puente, AT
    Fernández, T
    IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-FUNDAMENTAL THEORY AND APPLICATIONS, 2001, 48 (02): : 184 - 192
  • [40] LARGE-SIGNAL MODEL FOR IMPATT DIODE
    KREMER, R
    AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS, 1975, 29 (09): : 361 - 366