Dual-Gate Switch-HEMT Large-Signal Modeling

被引：0
|
作者：
Hu, Zhifu [1 ]
Tao, Yuan [2 ]
He, MeiLin [3 ]
Liu, YaNan [3 ]
Zhang, Qijun [1 ]
机构：
[1] Tianjin Univ, Sch Microelect, Tianjin, Peoples R China
[2] Univ Elect Sci & Technol China, Sch Elect Sci & Engn, Chengdu, Peoples R China
[3] Hebei Semicond Res Inst, Modeling Dept, Shijiazhuang, Hebei, Peoples R China
来源：
PROCEEDINGS OF THE 2019 IEEE ASIA-PACIFIC MICROWAVE CONFERENCE (APMC) | 2019年
关键词：
dual gate; HEMT; harmonic; large signal model; microwave switch;
D O I：
10.1109/apmc46564.2019.9038719
中图分类号：
TN [电子技术、通信技术];
学科分类号：
0809 ;
摘要：
In this paper, the measured linear and nonlinear characteristics of single-gate and dual-gate switch-based high electron mobility transistors (HEMTs) are compared. A new large-signal channel current model is proposed to fit the wide operation region of switch-HEMTs, especially the deep pinch-off region, high-Vgs region, and negative-Vds region. Full-wave electromagnetic analysis is used to extract the parasitic capacitances, which is very important to the accuracy of the switch model at high frequencies. A consistent dual-gate switch-HEMT large-signal modeling procedure is shown. The linear and nonlinear characteristics of the dual-gate large-signal model fit well with the measured results.
引用
收藏
页码：219 / 221
页数：3
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