Dual-Gate Switch-HEMT Large-Signal Modeling

被引：0

作者：

Hu, Zhifu ^{[1
]}

Tao, Yuan ^{[2
]}

He, MeiLin ^{[3
]}

Liu, YaNan ^{[3
]}

Zhang, Qijun ^{[1
]}

机构：

[1] Tianjin Univ, Sch Microelect, Tianjin, Peoples R China

[2] Univ Elect Sci & Technol China, Sch Elect Sci & Engn, Chengdu, Peoples R China

[3] Hebei Semicond Res Inst, Modeling Dept, Shijiazhuang, Hebei, Peoples R China

来源：

PROCEEDINGS OF THE 2019 IEEE ASIA-PACIFIC MICROWAVE CONFERENCE (APMC) | 2019年

关键词：

dual gate; HEMT; harmonic; large signal model; microwave switch;

D O I：

10.1109/apmc46564.2019.9038719

中图分类号：

TN [电子技术、通信技术];

学科分类号：

0809 ;

摘要：

In this paper, the measured linear and nonlinear characteristics of single-gate and dual-gate switch-based high electron mobility transistors (HEMTs) are compared. A new large-signal channel current model is proposed to fit the wide operation region of switch-HEMTs, especially the deep pinch-off region, high-Vgs region, and negative-Vds region. Full-wave electromagnetic analysis is used to extract the parasitic capacitances, which is very important to the accuracy of the switch model at high frequencies. A consistent dual-gate switch-HEMT large-signal modeling procedure is shown. The linear and nonlinear characteristics of the dual-gate large-signal model fit well with the measured results.

引用

页码：219 / 221

页数：3

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