Analytical modeling of dual-gate HFET's

被引：2
|
作者：
Long, W
Lee, LH
Kohn, E
Chin, KK
机构：
[1] New Jersey Inst Technol, Dept Elect Engn, Newark, NJ 07102 USA
[2] New Jersey Inst Technol, Dept Phys, Newark, NJ 07102 USA
[3] Univ Ulm, Dept Electron Devices & Circuits, Ulm, Germany
来源：
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | 1997年 / 16卷 / 12期
关键词：
device modeling; dual gate; HFET;
D O I：
10.1109/43.664223
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
A simple analytical dual-gate hetero-structure field-effect transistor (HFET) (DGHFET) model is presented. The advantage to using the presented expression is that they give simple analytic techniques for the analysis and calculation of the DGHFET I-V characteristics and small signal parameters. The dual-gate direct current (dc) and small signal behaviors under various bias conditions are investigated by analytical approach. It is shown that dual-gate configuration has much enhanced g(m)/g(d) and C-gs/C-dg ratios in contrast to its single-gate counterparts. Moreover, the accuracy of this model is verified by numerical calculations and experimental results.
引用
收藏
页码：1409 / 1417
页数：9
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