ANALYSIS AND MODELING OF DUAL-GATE MOSFETS

被引：27

|

作者：

BARSAN, RM

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1981年 / 28卷 / 05期

关键词：

D O I：

10.1109/T-ED.1981.20377

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：523 / 534

页数：12

相关论文

共 50 条

[1] SOFTWARE AIDS THE MODELING OF DUAL-GATE MOSFETS
HYMOWITZ, CE
MICROWAVES & RF, 1992, 31 (12) : 89 - &
[2] Analytical Vth Modeling for Dual-Gate MOSFETs With Independent Gate Control
Ghosh, Soumajit
Miura-Mattausch, M.
Iizuka, T.
Rahaman, Hafizur
Mattausch, H. J.
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 69 (10) : 5456 - 5461
[3] Dual-gate SOI MOSFETs: Physics and potential
Colinge, JP
PROCEEDINGS OF THE SEVENTH INTERNATIONAL SYMPOSIUM ON SILICON-ON-INSULATOR TECHNOLOGY AND DEVICES, 1996, 96 (03): : 271 - 286
[4] DUAL-GATE MOSFETS IN TV IF-AMPLIFIERS
WEAVER, S
IEEE TRANSACTIONS ON BROADCAST AND TELEVISION RECEIVERS, 1970, BT16 (02): : 96 - &
[5] MODELING AND ANALYSIS OF DUAL-GATE MESFET MIXERS
ASHOKA, H
TUCKER, RS
ELECTRONICS LETTERS, 1984, 20 (05) : 220 - 221
[6] Dual-gate MOSFETs match gate drive to load level
Schweber, B
EDN, 1998, 43 (09) : 13 - 13
[7] DUAL-GATE MOSFETs FOR uhf AND vhf APPLICATIONS.
Houthoff, J.
Uittenbogaard, T.H.
Electronic components & applications, 1982, 5 (01): : 46 - 55
[8] Analytical modeling of dual-gate HFET's
Long, W
Lee, LH
Kohn, E
Chin, KK
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 1997, 16 (12) : 1409 - 1417
[9] MODELING OF SINGLE-GATE AND DUAL-GATE MESFET MIXERS
MEIERER, R
TSIRONIS, C
ELECTRONICS LETTERS, 1984, 20 (02) : 97 - 98
[10] Analytic solution of the channel potential in undoped symmetric dual-gate MOSFETs
Ortiz-Conde, A
García-Sánchez, FJ
Malobabic, S
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005, 52 (07) : 1669 - 1672

← 1 2 3 4 5 →