Effects of AlN layer and impurities on optical properties of GaN

被引：0

作者：

Yang, J ^{[1
]}

Gong, J

Yang, L

Fan, H

Zhang, Y

Zsebök, O

Chen, G

机构：

[1] Jilin Normal Univ, Inst Condensed State Phys, Siping 136000, Peoples R China

[2] Jilin Univ, Coll Mat Sci & Engn, Changchun 130023, Peoples R China

[3] Chalmers Univ Technol, Dept Phys, SE-41296 Gothenburg, Sweden

来源：

CHEMICAL RESEARCH IN CHINESE UNIVERSITIES | 2005年 / 21卷 / 01期

关键词：

GaN; molecular beam epitaxy; photoluminescence; morphology;

D O I：

暂无

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The effects of the incorporated oxygen and the different buffer layers on the optical properties and surface morphology of GaN were studied. The results show that the decrease of the concentration of the incorporated oxygen has no effect on the surface morphology, but improves the optical properties. While the introduction of the AIN buffer layer makes not only the surface morphology but also the optical properties improve. Both the oxygen contamination from the nitrogen source and the resulted morphology are directly related to the line width of the low-temperature photoluminescence(PL) spectra.

引用

页码：78 / 82

页数：5

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