Growth and optical properties of GaN/AlN quantum wells

被引：76

作者：

Adelmann, C

Sarigiannidou, E

Jalabert, D

Hori, Y

Rouvière, JL

Daudin, B

Fanget, S

Bru-Chevallier, C

Shibata, T

Tanaka, M

机构：

[1] CEA Grenoble, DRFMC,SPMM, CNRS, Res Grp Nanophys & Semiconduct, F-38054 Grenoble 9, France

[2] Inst Natl Sci Appl, Phys Mat Lab, CNRS, UMR 5511, F-69621 Villeurbanne, France

[3] NGK Insulators Ltd, Corp Tech Ctr, Mizuho Ku, Nagoya, Aichi 4678530, Japan

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 23期

关键词：

D O I：

10.1063/1.1581386

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate the growth of GaN/AlN quantum-well structures by plasma-assisted molecular-beam epitaxy by taking advantage of the surfactant effect of Ga. The GaN/AlN quantum wells show photoluminescence emission with photon energies in the range between 4.2 and 2.3 eV for well widths between 0.7 and 2.6 nm, respectively. An internal electric field strength of 9.2 +/-1.0 MV/cm is deduced from the dependence of the emission energy on the well width. (C) 2003 American Institute of Physics.

引用

页码：4154 / 4156

页数：3

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