High yield fabrication of low threshold single-mode GaAs/AlGaAs semiconductor ring lasers using metallic etch masks

被引:1
|
作者
Dutta, Neilanjan [1 ]
Murakowski, Janusz A. [1 ]
Shi, Shouyuan [1 ]
Prather, Dennis W. [1 ]
机构
[1] Univ Delaware, Dept Elect Engn, Newark, DE 19716 USA
来源
OPTICS EXPRESS | 2010年 / 18卷 / 11期
关键词
CW OPERATION;
D O I
10.1364/OE.18.011242
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We demonstrate a novel high yield fabrication process for single-mode ridge-waveguide GaAs/AlGaAs ring lasers with significantly lower threshold currents than previously reported for similar devices. In this fabrication process, the ridge waveguide structure is patterned using a metallic etch mask, which survives ensuing fabrication steps to form a continuous metallic cover over the entire resonator structure. This metallic cover improves the uniformity of electrical contact between the resonator structure and the metallic biasing layer deposited at the conclusion of the fabrication process. This leads to optimum electrical pumping of the fabricated devices. This fabrication process also allows for the passivation of the ridge-waveguide device sidewalls and separation of the metallic biasing layer from the optical mode. (C) 2010 Optical Society of America
引用
收藏
页码:11242 / 11249
页数:8
相关论文
共 50 条
  • [31] High-power and low-threshold-current-density GaAs/AlGaAs quantum cascade lasers
    Liu Jun-Qi
    Liu Feng-Qi
    Li Lu
    Shao Ye
    Guo Yu
    Wang Zhan-Guo
    CHINESE PHYSICS LETTERS, 2006, 23 (07) : 1784 - 1786
  • [32] SHORT-EXTERNAL-CAVITY MODULE FOR ENHANCED SINGLE-MODE TUNING OF INGAASP AND ALGAAS SEMICONDUCTOR DIODE-LASERS
    CASSIDY, DT
    BRUCE, DM
    VENTRUDO, BF
    REVIEW OF SCIENTIFIC INSTRUMENTS, 1991, 62 (10): : 2385 - 2388
  • [33] Low divergent, high-power, single-mode terahertz wire lasers
    Garrasi, Katia
    Li, Lianhe
    Castellano, Fabrizio
    Linfield, Edmund H.
    Davies, A. Giles
    Vitiello, Miriam S.
    2016 41ST INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ), 2016,
  • [34] Novel integration technologies for photonic devices - Low threshold single-mode lasers by using lateral quantum size effect
    Arai, S
    Ohira, K
    Murayama, T
    2004 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2, 2004, : 603 - 604
  • [35] VERY LOW THRESHOLD CURRENT RIDGE-WAVEGUIDE ALGAAS GAAS SINGLE-QUANTUM-WELL LASERS
    WADA, O
    SANADA, T
    KUNO, M
    FUJII, T
    ELECTRONICS LETTERS, 1985, 21 (22) : 1025 - 1026
  • [36] High single-mode selectivity V-cavity tunable semiconductor laser based on GaAs
    Chen, Tuo
    Li, Mingyu
    Song, Yuxia
    Chang, Kai
    Zou, Yonggang
    He, Jian-Jun
    RESULTS IN PHYSICS, 2024, 56
  • [37] Evanescent-wave pumped room-temperature single-mode GaAs/AlGaAs core-shell nanowire lasers
    Wei, Wei
    Liu, Yange
    Zhang, Xia
    Wang, Zhi
    Ren, Xiaomin
    APPLIED PHYSICS LETTERS, 2014, 104 (22)
  • [38] GAAS/ALGAAS SINGLE-MODE OPTICAL WAVE-GUIDES WITH LOW PROPAGATION LOSS AND STRONG OPTICAL CONFINEMENT
    SETO, M
    SHAHAR, A
    DERI, RJ
    TOMLINSON, WJ
    YIYAN, A
    APPLIED PHYSICS LETTERS, 1990, 56 (11) : 990 - 992
  • [39] Optically pumped membrane BH-DFB lasers for low-threshold and single-mode operation
    Okamoto, T
    Nunoya, N
    Onodera, Y
    Yamazaki, T
    Tamura, S
    Arai, S
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2003, 9 (05) : 1361 - 1366
  • [40] Low Threshold Single-Mode 780nm Surface Grating DFB Lasers for Atomic Clocks
    Zhang, Pengfei
    Lu, Qiaoyin
    Guo, Weihua
    2017 ASIA COMMUNICATIONS AND PHOTONICS CONFERENCE (ACP), 2017,