High yield fabrication of low threshold single-mode GaAs/AlGaAs semiconductor ring lasers using metallic etch masks

被引:1
|
作者
Dutta, Neilanjan [1 ]
Murakowski, Janusz A. [1 ]
Shi, Shouyuan [1 ]
Prather, Dennis W. [1 ]
机构
[1] Univ Delaware, Dept Elect Engn, Newark, DE 19716 USA
来源
OPTICS EXPRESS | 2010年 / 18卷 / 11期
关键词
CW OPERATION;
D O I
10.1364/OE.18.011242
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We demonstrate a novel high yield fabrication process for single-mode ridge-waveguide GaAs/AlGaAs ring lasers with significantly lower threshold currents than previously reported for similar devices. In this fabrication process, the ridge waveguide structure is patterned using a metallic etch mask, which survives ensuing fabrication steps to form a continuous metallic cover over the entire resonator structure. This metallic cover improves the uniformity of electrical contact between the resonator structure and the metallic biasing layer deposited at the conclusion of the fabrication process. This leads to optimum electrical pumping of the fabricated devices. This fabrication process also allows for the passivation of the ridge-waveguide device sidewalls and separation of the metallic biasing layer from the optical mode. (C) 2010 Optical Society of America
引用
收藏
页码:11242 / 11249
页数:8
相关论文
共 50 条
  • [21] Single-mode operation of GaAsP ring/Fabry-Perot composite cavity semiconductor lasers
    Saha, Ashim Kumar
    Uemukai, Masahiro
    Suhara, Toshiaki
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2015, 54 (06)
  • [22] Efficient single-mode GaAs/AlGaAs W waveguide phase modulator with a low propagation loss
    Byun, YT
    Park, KH
    Kim, SH
    Choi, SS
    Yi, JC
    Lim, TK
    APPLIED OPTICS, 1998, 37 (03): : 496 - 501
  • [23] Design of a Low Threshold Single-Mode In-P Laser Using Regrowth-Free Fabrication
    Sharma, A.
    Landais, P.
    Srivastava, M.
    Wallace, M.
    Smyth, F.
    Kaszubowska-Anandarajah, A.
    Anandarajah, P.
    IEEE PHOTONICS JOURNAL, 2024, 16 (03): : 1 - 9
  • [24] Very high power operation of 980 nm single-mode InGaAs/AlGaAs pump lasers
    Bettiati, MA
    Starck, C
    Laruelle, F
    Cargemel, V
    Pagnod, P
    Garabedian, P
    Keller, D
    Ughetto, G
    Bertreux, JC
    Raymond, L
    Gelly, G
    Capella, RM
    HIGH-POWER DIODE LASER TECHNOLOGY AND APPLICATIONS IV, 2006, 6104
  • [25] High power single mode 980 nm AlGaInAs/AlGaAs quantum well lasers with a very low threshold current
    董振
    王翠鸾
    井红旗
    刘素平
    马骁宇
    Journal of Semiconductors, 2013, 34 (11) : 74 - 77
  • [26] High power single mode 980 nm AlGaInAs/AlGaAs quantum well lasers with a very low threshold current
    Dong Zhen
    Wang Cuiluan
    Jing Hongqi
    Liu Suping
    Ma Xiaoyu
    JOURNAL OF SEMICONDUCTORS, 2013, 34 (11)
  • [27] High power single mode 980 nm AlGaInAs/AlGaAs quantum well lasers with a very low threshold current
    董振
    王翠鸾
    井红旗
    刘素平
    马骁宇
    Journal of Semiconductors, 2013, (11) : 74 - 77
  • [28] Low-Threshold, Single-Mode, Compact Brillouin/Erbium Fiber Ring Laser
    Chen, Mo
    Meng, Zhou
    Zhou, Huijuan
    JOURNAL OF LIGHTWAVE TECHNOLOGY, 2013, 31 (12) : 1980 - 1986
  • [29] THEORETICAL-ANALYSIS OF SINGLE-MODE ALGAAS-GAAS DOUBLE HETEROSTRUCTURE LASERS WITH CHANNEL-GUIDE STRUCTURE
    YANG, JJJ
    DUPUIS, RD
    DAPKUS, PD
    JOURNAL OF APPLIED PHYSICS, 1982, 53 (11) : 7218 - 7223
  • [30] High-Brightness and Ultranarrow-Beam 850-nm GaAs/AlGaAs Photonic Band Crystal Lasers and Single-Mode Arrays
    Kettler, Thorsten
    Posilovic, Kristijan
    Karachinsky, Leonid Ya
    Ressel, Peter
    Ginolas, Arnim
    Fricke, Joerg
    Pohl, Udo W.
    Shchukin, Vitaly A.
    Ledentsov, Nikolai N.
    Bimberg, Dieter
    Joensson, Jan
    Weyers, Markus
    Erbert, Goetz
    Traenkle, Guenther
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2009, 15 (03) : 901 - 908