Stimulated emission from free-standing GaN/Si micro-disk structures

被引:2
|
作者
Choi, H. W. [1 ]
Hui, K. N. [1 ]
Lai, P. T. [1 ]
Chen, P. [2 ]
Zhang, X. H. [2 ]
Teng, J. H. [2 ]
Tripathy, S. [2 ]
Chua, S. J. [2 ]
机构
[1] Univ Hong Kong, Dept Elect & Elect Engn, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China
[2] Inst Mat Res & Engn, Singapore 117602, Singapore
关键词
D O I
10.1002/pssc.200674761
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Arrays of pivoted GaN microdisks have been fabricated on GaN/Si material by a combination of dry and wet etching. The Si material beneath the GaN microdisks is removed by wet etching, leaving behind a fine pillar to support the disks. The top and botton faces of the microdisks are optically smooth, suitable for forming optical cavities. Resonant modes, corresponding to whispering gallery modes, are observed in the photoluminescence spectra. Stimulated emission is achieved at higher optical pumping intensities. (C) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码:2358 / +
页数:2
相关论文
共 50 条
  • [41] Visible light emission from free-standing filament crystals of silicon
    Gule, YG
    Rudko, GY
    Klimovskaya, AI
    Valakh, MY
    Ostrovskii, IP
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1997, 161 (02): : 565 - 570
  • [42] Polarized photoluminescence study of free and bound excitons in free-standing GaN
    Paskov, PP
    Paskova, T
    Holtz, PO
    Monemar, B
    PHYSICAL REVIEW B, 2004, 70 (03) : 035210 - 1
  • [43] Research on the epitaxial growth of Power/RF HEMT structures on n-GaN and Fe-doped SI-GaN Free-Standing Substrates by MOCVD
    Wang, Xiao
    Zhang, Yumin
    Wang, Mengyi
    Wang, Jianfeng
    Xu, Ke
    VACUUM, 2025, 235
  • [44] High performance GaN pin rectifiers grown on free-standing GaN substrates
    Limb, J. B.
    Yoo, D.
    Ryou, J. -H.
    Lee, W.
    Shen, S. -C.
    Dupuis, R. D.
    ELECTRONICS LETTERS, 2006, 42 (22) : 1313 - 1314
  • [45] High Breakdown Voltage AlGaN/GaN HEMTs on Free-Standing GaN Substrate
    Ng, J. H.
    Tone, K.
    Asubar, J. T.
    Tokuda, H.
    Kuzuhara, M.
    2015 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK), 2015,
  • [46] GaN ultraviolet avalanche photodiodes fabricated on free-standing bulk GaN substrates
    Zhang, Yun
    Yoo, Dongwon
    Limb, Jae-Boum
    Ryou, Jae-Hyun
    Dupuis, Russell D.
    Shen, Shyh-Chiang
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6, 2008, 5 (06): : 2290 - +
  • [47] Remarkable Current Collapse Suppression in GaN HEMTs on Free-standing GaN Substrates
    Kumazaki, Yusuke
    Ohki, Toshihiro
    Kotani, Junji
    Ozaki, Shiro
    Niida, Yoshitaka
    Makiyama, Kozo
    Minoura, Yuichi
    Okamoto, Naoya
    Nakamura, Norikazu
    Watanabe, Keiji
    2019 IEEE BICMOS AND COMPOUND SEMICONDUCTOR INTEGRATED CIRCUITS AND TECHNOLOGY SYMPOSIUM (BCICTS 2019), 2019,
  • [48] Thermoelectric properties and thermoelectric devices of free-standing GaN and epitaxial GaN layer
    Kaiwa, N.
    Hoshino, M.
    Yaginuma, T.
    Izaki, R.
    Yamaguchi, S.
    Yamamoto, A.
    THIN SOLID FILMS, 2007, 515 (10) : 4501 - 4504
  • [49] Fabrication of free-standing PbSe micro-rods
    Jain, S.
    Mukherjee, S.
    Guan, Z. P.
    Ray, D.
    Zhao, F.
    Li, D.
    Shi, Z.
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2007, 39 (01): : 120 - 123
  • [50] Giant Lateral Photovoltage in a SiC/Si Heterojunction with a Micro Free-Standing SiC Serpentine Beam
    Nguyen, Tuan-Hung
    Pham, Tuan Anh
    Vu, Trung-Hieu
    Nguyen, Hong-Quan
    Duran, Pablo Guzman
    Streed, Erik W.
    Fastier-Wooller, Jarred William
    Dau, Van Thanh
    Nguyen, Nam-Trung
    Dao, Dzung Viet
    ACS APPLIED ENERGY MATERIALS, 2022, 5 (08): : 9830 - 9836