4.2mW GaInNAs long-wavelength VCSEL grown by metalorganic chemical vapor deposition

被引：0
|
作者：
Nishida, T [1 ]
Takaya, M [1 ]
Kakinuma, S [1 ]
Kaneko, T [1 ]
Shimoda, T [1 ]
机构：
[1] Seiko Epson Corp, Nagano 3990293, Japan
来源：
2004 IEEE 19TH INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE, CONFERENCE DIGEST | 2004年
关键词：
D O I：
10.1109/ISLC.2004.1382761
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We achieved high output power GaInNAs verticalcavity surface-emitting lasers (VCSELs) emitting at 1261.5nm. The continuous wave (CW) output power at room temperature reached to 4.2mW with the slope efficiency of 0.52W/A.
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页码：73 / 74
页数：2
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