Space-charge generation-recombination current in an abrupt P-N junction subjected to small bias voltage

被引：0

作者：

Gaci, A ^{[1
]}

Raiff, B ^{[1
]}

Ahmadpanah, M ^{[1
]}

Boucher, J ^{[1
]}

机构：

[1] ENSEEIHT, Elect Lab, F-31071 Toulouse, France

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1998年 / 45卷 / 01期

关键词：

D O I：

10.1109/16.658851

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new modeling is proposed for the space-charge generation-recombination current in a P-N junction, based on the Boltzmann statistics and by accounting for the free carriers in the space-charge region (SCR), This model, which does not necessitate the knowledge of the x-variation of the potential in the SCR, is shown to provide more accurate results than those furnished by the available models and the corresponding model used in SPICE. The proposed model can be easily incorporated in the P-N junction characterization of SPICE or any other similar circuit simulator.

引用

页码：331 / 334

页数：4

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