user

Essential strategies for the growth of high-quality (Al, Ga)N/GaN and GaN/(In, Ga)N heterostructures on SiC(0001) by molecular beam epitaxy

被引：0
|
作者：
Brandt, O [1 ]
Muralidharan, R [1 ]
Thamm, A [1 ]
Waltereit, P [1 ]
Ploog, KH [1 ]
机构：
[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany
来源：
PROCEEDING OF THE TENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOLS I AND II | 2000年 / 3975卷
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We identify and discuss the essential strategies for the growth of (Al,Ga)N/GaN and GaN/(In,Ga)N heterostructures on SiC(0001) by both plasma-assisted and reactive molecular beam epitaxy. Substrate preparation, nucleation, and growth conditions are optimized for simultaneously satisfying the requirement of a high structural, morphological, optical and electrical quality. The results demonstrate that molecular beam epitaxy is a competitive technique for the growth of group m-nitrides.
引用
收藏
页码：1495 / 1506
页数：12
相关论文
共 50 条
  • [1] Critical issues for the growth of high-quality (Al,Ga)N/GaN and GaN/(In,Ga)N heterostructures on SiC(0001) by molecular-beam epitaxy
    Brandt, O
    Muralidharan, R
    Waltereit, P
    Thamm, A
    Trampert, A
    von Kiedrowski, H
    Ploog, KH
    [J]. APPLIED PHYSICS LETTERS, 1999, 75 (25) : 4019 - 4021
  • [2] Key issues for the growth of high quality (Al,Ga)N/GaN and GaN/(In,Ga)N heterostructures on SiC(0001) by molecular beam epitaxy
    Brandt, O
    Muralidharan, R
    Thamm, A
    Waltereit, P
    Ploog, KH
    [J]. APPLIED SURFACE SCIENCE, 2001, 175 : 419 - 427
  • [3] Growth of high-quality (Al,Ga)N and (Ga,In)N heterostructures on SiC(0001) by both plasma-assisted and reactive molecular beam epitaxy
    Ploog, KH
    Brandt, O
    Muralidharan, R
    Thamm, A
    Waltereit, P
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (04): : 2290 - 2294
  • [4] Cathodoluminescence of GaAs/(Al,Ga)As and (In,Ga)N/GaN heterostructures grown by molecular beam epitaxy
    Jahn, U
    Brandt, O
    Trampert, A
    Waltereit, P
    Hey, R
    Ploog, KH
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 91 : 329 - 335
  • [5] Morphology of GaN surfaces and GaN/(Al,Ga)N interfaces grown on 6H-SiC(0001) by reactive molecular beam epitaxy
    Thamm, A
    Brandt, O
    Trampert, A
    Ploog, KH
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2000, 180 (01): : 73 - 79
  • [6] Structural and vibrational properties of molecular beam epitaxy grown cubic (Al, Ga)N/GaN heterostructures
    Frey, T
    As, DJ
    Bartels, M
    Pawlis, A
    Lischka, K
    Tabata, A
    Fernandez, JRL
    Silva, MTO
    Leite, JR
    Haug, C
    Brenn, R
    [J]. JOURNAL OF APPLIED PHYSICS, 2001, 89 (05) : 2631 - 2634
  • [7] Interfacial N Vacancies in GaN/(Al,Ga)N/GaN Heterostructures
    Prozheeva, Vera
    Makkonen, Ilja
    Li, Haoran
    Keller, Stacia
    Mishra, Umesh K.
    Tuomisto, Filip
    [J]. PHYSICAL REVIEW APPLIED, 2020, 13 (04)
  • [8] (Al,In)N layers and (Al,In)N/GaN heterostructures grown by plasma-assisted molecular beam epitaxy on 6H-SiC(0001)
    Ive, Tommy
    Brandt, Oliver
    Kong, Xiang
    Trampert, Achim
    Ploog, Klaus H.
    [J]. PHYSICAL REVIEW B, 2008, 78 (03)
  • [9] Strain relaxation in (Al,Ga)N/GaN heterostructures
    Vennegues, P.
    Bethoux, J. M.
    Bougrioua, Z.
    Azize, M.
    De Mierry, P.
    Tottereau, O.
    [J]. Microscopy of Semiconducting Materials, 2005, 107 : 51 - 54
  • [10] Growth of high-quality N-polar GaN on bulk GaN by plasma-assisted molecular beam epitaxy
    Wurm, Christian
    Ahmadi, Elaheh
    Wu, Feng
    Hatui, Nirupam
    Keller, Stacia
    Speck, James
    Mishra, Umesh
    [J]. SOLID STATE COMMUNICATIONS, 2020, 305
12345