Ultraviolet GaN-based microdisk laser with AlN/AlGaN distributed Bragg reflector

被引：18

作者：

Chen, Cheng-Chang ^{[1
]}

Shih, M. H. ^{[1
,2
]}

Yang, Yi-Chun ^{[2
]}

Kuo, Hao-Chung ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Inst Electroopt Engn, Dept Photon, Hsinchu 300, Taiwan

[2] Acad Sinica, RCAS, Taipei 11529, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 15期

关键词：

aluminium compounds; distributed Bragg reflector lasers; finite difference time-domain analysis; gallium compounds; III-V semiconductors; laser modes; microdisc lasers; optical pumping; whispering gallery modes; wide band gap semiconductors; LIGHT-EMITTING-DIODES; GAN/INGAN MICRODISKS; BLUE;

D O I：

10.1063/1.3399781

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrated a 4.7 mu m GaN-based microdisk laser with 25-pair AlN/AlGaN distributed Bragg reflector in ultraviolet range without undercut or deeply-etching procedures. The distributed Bragg reflector provides a high reflectivity of 85%, and selects lasing mode around 375 nm wavelength. Under optical pumping conditions, the lasing action was observed with a low threshold power density of 0.03 kW/cm(2). We also characterized the whispering gallery mode profiles of the microdisk with finite-different time-domain simulation.

引用

页数：3

共 50 条

[1] Light Emission Enhancement of GaN-Based Photonic Crystal With Ultraviolet AlN/AlGaN Distributed Bragg Reflector
Chen, Cheng-Chang
Chen, Jun-Rong
Yang, Yi-Chun
Shih, M. -H.
Kuo, Hao-Chung
[J]. JOURNAL OF LIGHTWAVE TECHNOLOGY, 2010, 28 (22) : 3189 - 3192
[2] Tunable Light Emission from GaN-Based Photonic Crystal with Ultraviolet AlN/AlGaN Distributed Bragg Reflector
Chen, Cheng-Chang
Chiu, Ching-Hsueh
Yang, Yi-Chun
Shih, M. H.
Chen, Jun-Rong
Li, Zhen-Zu
Kuo, Hao-Chung
Lu, Tien-Chang
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (04)
[3] Nonpolar GaN-based microcavity using AlN/GaN distributed bragg reflector
Zhu, T.
Dussaigne, A.
Christmann, G.
Pinquier, C.
Feltin, E.
Martin, D.
Butte, R.
Grandjean, N.
[J]. APPLIED PHYSICS LETTERS, 2008, 92 (06)
[4] High-reflectivity AlGaN/AlN distributed Bragg reflector in ultraviolet region
Ji Xiao-Li
Jiang Ruo-Lian
Xie Zi-Li
Liu Bin
Zhou Jian-Jun
Li Liang
Han Ping
Zhang Rong
ZhengYou-Dou
Gong Hai-Mei
[J]. CHINESE PHYSICS LETTERS, 2007, 24 (06) : 1735 - 1737
[5] High reflectivity ultraviolet distributed Bragg reflector based on AlGaN/AlGaN multilayer
Shimada, Ryoko
Xie, Jinqiao
Morkog, Hadis
[J]. GALLIUM NITRIDE MATERIALS AND DEVICES II, 2007, 6473
[6] GaN-based ultraviolet microdisk laser diode grown on Si
JIN WANG
MEIXIN FENG
RUI ZHOU
QIAN SUN
JIANXUN LIU
YINGNAN HUANG
YU ZHOU
HONGWEI GAO
XINHE ZHENG
MASAO IKEDA
HUI YANG
[J]. Photonics Research, 2019, (06) : 604 - 607
[7] GaN-based ultraviolet microdisk laser diode grown on Si
JIN WANG
MEIXIN FENG
RUI ZHOU
QIAN SUN
JIANXUN LIU
YINGNAN HUANG
YU ZHOU
HONGWEI GAO
XINHE ZHENG
MASAO IKEDA
HUI YANG
[J]. Photonics Research., 2019, 7 (06) - 607
[8] Photon-Recycling in Ultraviolet GaN-Based Photodiodes with Porous AlGaN Distributed Bragg Reflectors
Wu, Chia-Jung
Wang, Guan-Jhong
Kao, Chyuan Hauer
Yang, Zhong-Jie
Chen, Hsiang
Lin, Yung-Sen
Lin, Chia-Feng
Han, Jung
[J]. ACS APPLIED NANO MATERIALS, 2019, 2 (08) : 5044 - 5048
[9] GaN-based ultraviolet microdisk laser diode grown on Si
Wang, Jin
Feng, Meixin
Zhou, Rui
Sun, Qian
Liu, Jianxun
Huang, Yingnan
Zhou, Yu
Gao, Hongwei
Zheng, Xinhe
Ikeda, Masao
Yang, Hui
[J]. PHOTONICS RESEARCH, 2019, 7 (06) : B32 - B35
[10] Design and fabrication of double AlGaN/GaN distributed Bragg reflector stack mirror for the application of GaN-based optoelectronic devices
Gaoqiang Deng
Yuantao Zhang
Pengchong Li
Ye Yu
Xu Han
Liang Chen
Long Yan
Xin Dong
Degang Zhao
Guotong Du
[J]. Journal of Materials Science: Materials in Electronics, 2019, 30 : 3277 - 3282

← 1 2 3 4 5 →