Nonpolar GaN-based microcavity using AlN/GaN distributed bragg reflector

被引：16

作者：

Zhu, T. ^{[1
]}

Dussaigne, A. ^{[1
]}

Christmann, G. ^{[1
]}

Pinquier, C. ^{[1
]}

Feltin, E. ^{[1
]}

Martin, D. ^{[1
]}

Butte, R. ^{[1
]}

Grandjean, N. ^{[1
]}

机构：

[1] Ecole Polytech Fed Lausanne, IPEQ, CH-1015 Lausanne, Switzerland

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 06期

关键词：

D O I：

10.1063/1.2857500

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nonpolar GaN based microcavity (MC) made of a bottom AlN/GaN distributed Bragg reflector (DBR) and a top dielectric SiO(2)/SiN(x) DBR has been fabricated on a-plane GaN template. The 13 pair AlN/GaN DBR, centered around 372 nm, exhibits a peak reflectivity of similar to 95% together with a flat stopband of 30 nm width. The cavity mode centered around 390 nm is characterized by a full width at half maximum of 4 nm. The optical properties of both the DBR and MC are well reproduced when accounting for linear birefringence effects. (c) 2008 American Institute of Physics.

引用

页数：3

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