Electrically injected nonpolar GaN-based VCSELs with lattice-matched nanoporous distributed Bragg reflector mirrors

被引：47

作者：

Mishkat-Ul-Masabih, Saadat M. ^{[1
]}

Aragon, Andrew A. ^{[1
]}

Monavarian, Morteza ^{[1
]}

Luk, Ting S. ^{[2
]}

Feezell, Daniel F. ^{[1
]}

机构：

[1] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA

[2] Sandia Natl Labs, Ctr Integrated Nanotechnol, POB 5800, Albuquerque, NM 87185 USA

来源：

APPLIED PHYSICS EXPRESS | 2019年 / 12卷 / 03期

基金：

美国国家科学基金会;

关键词：

OPTICAL-PROPERTIES; PLANE;

D O I：

10.7567/1882-0786/ab0576

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate the first electrically injected nonpolar m-plane GaN-based vertical-cavity surface-emitting lasers (VCSELs) with lattice-matched nanoporous bottom DBRs. Lasing under pulsed operation at room temperature was observed near 409 nm with a linewidth of similar to 0.6 nm and a maximum output power of similar to 1.5 mW. The VCSELs were linearly polarized and polarization-locked in the a-direction, with a polarization ratio of 0.94. The high polarization ratio and polarization pinning reveal that the optical scattering from the nanoporous DBRs is negligible. A high characteristic temperature of 357 K resulted from the slightly negative offset between the peak gain and cavity mode wavelengths. (C) 2019 The Japan Society of Applied Physics

引用

页数：5

共 49 条

[1] Nonpolar GaN-based VCSELs with lattice-matched nanoporous distributed Bragg reflector mirrors
Mishkat-Ul-Masabih, Saadat M.
Aragon, Andrew A.
Monavarian, Morteza
Luk, Ting S.
Feezell, Daniel F.
[J]. GALLIUM NITRIDE MATERIALS AND DEVICES XV, 2020, 11280
[2] Nonpolar GaN-based microcavity using AlN/GaN distributed bragg reflector
Zhu, T.
Dussaigne, A.
Christmann, G.
Pinquier, C.
Feltin, E.
Martin, D.
Butte, R.
Grandjean, N.
[J]. APPLIED PHYSICS LETTERS, 2008, 92 (06)
[3] Epitaxial lattice-matched AlScN/GaN distributed Bragg reflectors
van Deurzen, L.
Nguyen, T. -S.
Casamento, J.
Xing, H. G.
Jena, D.
[J]. APPLIED PHYSICS LETTERS, 2023, 123 (24)
[4] Long-wavelength VCSELs with AlGaAsSb/AlAsSb Bragg mirrors lattice-matched on InP substrates
Almuneau, G
Hall, EM
Nakagawa, S
Kim, JK
Coldren, LA
[J]. VERTICAL-CAVITY SURFACE-EMITTING LASERS IV, 2000, 3946 : 48 - 56
[5] Nearly Lattice-Matched GaN Distributed Bragg Reflectors with Enhanced Performance
Tian, Ye
Feng, Peng
Zhu, Chenqi
Chen, Xinchi
Xu, Ce
Esendag, Volkan
de Arriba, Guillem Martinez
Wang, Tao
[J]. MATERIALS, 2022, 15 (10)
[6] Fabrication and characterization of GaN-based distributed Bragg reflector mirrors for low lasing threshold and integrated photonics
Kotani, T
Hatada, Y
Funato, M
Narukawa, Y
Mukai, T
Kawakami, Y
Fujita, S
[J]. PHYSICA STATUS SOLIDI C - CONFERENCES AND CRITICAL REVIEWS, VOL 2, NO 7, 2005, 2 (07): : 2895 - 2898
[7] Electrically-injected VCSELs with a composite monolithic high contrast grating and distributed Bragg reflector coupling mirror
Gebski, Marcin
Czyszanowski, Tomasz
Lott, James A.
[J]. 2018 IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC), 2018, : 189 - 190
[8] MBE growth and characterization of a II-VI distributed Bragg reflector and microcavity lattice-matched to MgTe
Rousset, J. -G.
Kobak, J.
Slupinski, T.
Jakubczyk, T.
Stawicki, P.
Janik, E.
Tokarczyk, M.
Kowalski, G.
Nawrocki, M.
Pacuski, W.
[J]. JOURNAL OF CRYSTAL GROWTH, 2013, 378 : 266 - 269
[9] GaN-Based Submicrometer HEMTs With Lattice-Matched InAlGaN Barrier Grown by MBE
Lim, T.
Aidam, R.
Waltereit, P.
Henkel, T.
Quay, R.
Lozar, R.
Maier, T.
Kirste, L.
Ambacher, O.
[J]. IEEE ELECTRON DEVICE LETTERS, 2010, 31 (07) : 671 - 673
[10] Ultraviolet GaN-based microdisk laser with AlN/AlGaN distributed Bragg reflector
Chen, Cheng-Chang
Shih, M. H.
Yang, Yi-Chun
Kuo, Hao-Chung
[J]. APPLIED PHYSICS LETTERS, 2010, 96 (15)

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