Ultraviolet GaN-based microdisk laser with AlN/AlGaN distributed Bragg reflector

被引：18
|
作者：
Chen, Cheng-Chang [1 ]
Shih, M. H. [1 ,2 ]
Yang, Yi-Chun [2 ]
Kuo, Hao-Chung [1 ]
机构：
[1] Natl Chiao Tung Univ, Inst Electroopt Engn, Dept Photon, Hsinchu 300, Taiwan
[2] Acad Sinica, RCAS, Taipei 11529, Taiwan
来源：
APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 15期
关键词：
aluminium compounds; distributed Bragg reflector lasers; finite difference time-domain analysis; gallium compounds; III-V semiconductors; laser modes; microdisc lasers; optical pumping; whispering gallery modes; wide band gap semiconductors; LIGHT-EMITTING-DIODES; GAN/INGAN MICRODISKS; BLUE;
D O I：
10.1063/1.3399781
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We demonstrated a 4.7 mu m GaN-based microdisk laser with 25-pair AlN/AlGaN distributed Bragg reflector in ultraviolet range without undercut or deeply-etching procedures. The distributed Bragg reflector provides a high reflectivity of 85%, and selects lasing mode around 375 nm wavelength. Under optical pumping conditions, the lasing action was observed with a low threshold power density of 0.03 kW/cm(2). We also characterized the whispering gallery mode profiles of the microdisk with finite-different time-domain simulation.
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页数：3
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