Defect emissions in ZnO nanostructures

被引:652
|
作者
Djurisic, A. B. [1 ]
Leung, Y. H.
Tam, K. H.
Hsu, Y. F.
Ding, L.
Ge, W. K.
Zhong, Y. C.
Wong, K. S.
Chan, W. K.
Tam, H. L.
Cheah, K. W.
Kwok, W. M.
Phillips, D. L.
机构
[1] Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
[2] Univ Hong Kong, Dept Chem, Hong Kong, Hong Kong, Peoples R China
[3] Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Hong Kong, Peoples R China
[4] Hong Kong Baptist Univ, Dept Phys, Kowloon, Hong Kong, Peoples R China
[5] Hong Kong Baptist Univ, Ctr Adv Luminescent Mat, Kowloon, Hong Kong, Peoples R China
关键词
D O I
10.1088/0957-4484/18/9/095702
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Defects in three different types of ZnO nanostructures before and after annealing under different conditions were studied. The annealing atmosphere and temperature were found to strongly affect the yellow and orange-red defect emissions, while green emission was not significantly affected by annealing. The defect emissions exhibited a strong dependence on the temperature and excitation wavelength, with some defect emissions observable only at low temperatures and for certain excitation wavelengths. The yellow emission in samples prepared by a hydrothermal method is likely due to the presence of OH groups, instead of the commonly assumed interstitial oxygen defect. The green and orange-red emissions are likely due to donor acceptor transitions involving defect complexes, which likely include zinc vacancy complexes in the case of orange-red emissions.
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页数:8
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