Field-assisted growth of one-dimensional ZnO nanostructures with high defect density

被引:10
|
作者
Xin Li Phuah [1 ]
Cho, Jaehun [1 ]
Akriti [2 ]
Dou, Letian [2 ]
Rheinheimer, Wolfgang [1 ,3 ]
Garcia, R. Edwin [1 ]
Zhang, Xinghang [1 ]
Wang, Haiyan [1 ,4 ]
机构
[1] Purdue Univ, Sch Mat Engn, W Lafayette, IN 47907 USA
[2] Purdue Univ, Davidson Sch Chem Engn, W Lafayette, IN 47907 USA
[3] Julich Res Ctr, Inst Energy & Climate Res Mat Synth & Proc IEK 1, D-52428 Julich, Germany
[4] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
关键词
ZnO; nanostructures; stacking faults; defects; flash sintering; NANOROD ARRAYS; GRAIN-GROWTH; ZINC-OXIDE; FLASH; NANOWIRES; FABRICATION; MICROSTRUCTURE; NANOTUBES; ZIRCONIA; 3YSZ;
D O I
10.1088/1361-6528/abcb2f
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
One-dimensional ZnO nanostructures have shown great potential in electronics, optoelectronics and electromechanical devices owing to their unique physical and chemical properties. Most of these nanostructures were grown by equilibrium processes where the defects density is controlled by thermodynamic equilibrium. In this work, flash sintering, a non-equilibrium field-assisted processing method, has been used to synthesize ZnO nanostructures. By applying a high electric field and limiting a low current flow, ZnO nanorods grew uniformly by a vapor-liquid-solid mechanism due to the extreme temperatures achieved near the hot spot. High density basal stacking faults in the nanorods along with ultraviolet excitonic emission and a red emission under room temperature demonstrate the potential of defect engineering in nanostructures via the field-assisted growth method.
引用
收藏
页数:9
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