Irregular growth of PECVD-Ti silicide film on doped Si substrates

被引：0
|
作者：
Tai, K [1 ]
Harada, Y [1 ]
Matsumoto, M [1 ]
Oki, H [1 ]
机构：
[1] Oki Elect Ind Co Ltd, LSI Prod Div, Hachioji, Tokyo 1938550, Japan
来源：
PROCEEDINGS OF THE IEEE 2000 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2000年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Plasma enhanced chemical vapor deposition (PECVD) Ti films deposited on several kinds of Si substrates were evaluated. We have found that a irregular Ti silicide growth occurred on B-ion implanted substrates while no irregular growth is observed on other types of substrates. No irregular growth occurred when CVD-Ti silicide film had the TiSi phase whereas the irregular growth occurred with the C49-TiSi2 formation. It has been clarified that C49-TiSi2 formation during deposition causes the irregular growth of CVD-Ti silicide film on B-ion implanted Si substrate.
引用
收藏
页码：64 / 66
页数：3
相关论文
共 50 条
  • [31] A comparative study on the nucleation and growth of ECR-PECVD PLZT ((Pb,La)(Zr,Ti)O3) thin films on Pt/SiO2/Si substrates and on Pt/Ti/SiO2/Si substrates
    Shin, JS
    Lee, WJ
    THIN SOLID FILMS, 1998, 333 (1-2) : 142 - 149
  • [32] SCANNING TUNNELING MICROSCOPE INVESTIGATION OF THE GROWTH-MORPHOLOGY OF TITANIUM SILICIDE ON SI(111) SUBSTRATES
    STEPHENSON, AW
    WELLAND, ME
    JOURNAL OF APPLIED PHYSICS, 1995, 78 (08) : 5143 - 5154
  • [33] Growth of an Eu-Si(111) thin film structure: The stage of silicide formation
    T. V. Krachino
    M. V. Kuz’min
    M. V. Loginov
    M. A. Mittsev
    Physics of the Solid State, 2004, 46 : 563 - 568
  • [34] Hydrogenation of Mg film and Mg nanoblade array on Ti coated Si substrates
    He, Yuping
    Zhao, Yiping
    Huang, Liwei
    Wang, Howard
    Composto, Russell J.
    APPLIED PHYSICS LETTERS, 2008, 93 (16)
  • [35] Growth of an Eu-Si(111) thin film structure: The stage of silicide formation
    Krachino, TV
    Kuz'min, MV
    Loginov, MV
    Mittsev, MA
    PHYSICS OF THE SOLID STATE, 2004, 46 (03) : 563 - 568
  • [36] Effect of P Concentration on Ti Silicide Formation in In-Situ P Doped Epitaxial Si Films
    Park, Seran
    Shin, Hyunsu
    Ko, Eunjung
    Ko, Dae-Hong
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2019, 216 (10):
  • [37] Agglomeration and Dendritic Growth of Cu/Ti/Si Thin Film
    Lin, Qi-jing
    Jing, Weixuan
    Yang, Shu-ming
    Jiang, Zhuang-de
    Wang, Chen-ying
    JOURNAL OF NANOMATERIALS, 2014, 2014
  • [38] The growth simulation of Ti thin film onto Si substrate
    Wu, Qing-Ying
    Chen, Xiao-Long
    Sun, Ling-Guang
    Luo, Shun-Zhong
    Zhu, Jian-Guo
    Gongneng Cailiao/Journal of Functional Materials, 2013, 44 (05): : 727 - 730
  • [39] Effects of Fe film thickness and pretreatments on the growth behaviours of carbon nanotubes on Fe-doped (001) Si substrates
    Sohn, JI
    Choi, CJ
    Lee, S
    Seong, TY
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (7A): : 4731 - 4736
  • [40] Effects of Fe film thickness and pretreatments on the growth behaviours of carbon nanotubes on Fe-doped (001) Si substrates
    Sohn, Jung Inn
    Choi, Chel-Jong
    Lee, Seonghoon
    Seong, Tae-Yeon
    Lee, S. (shlee@kjist.ac.kr), 1600, Japan Society of Applied Physics (41): : 4731 - 4736
12345