Irregular growth of PECVD-Ti silicide film on doped Si substrates

被引：0

作者：

Tai, K ^{[1
]}

Harada, Y ^{[1
]}

Matsumoto, M ^{[1
]}

Oki, H ^{[1
]}

机构：

[1] Oki Elect Ind Co Ltd, LSI Prod Div, Hachioji, Tokyo 1938550, Japan

来源：

PROCEEDINGS OF THE IEEE 2000 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2000年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Plasma enhanced chemical vapor deposition (PECVD) Ti films deposited on several kinds of Si substrates were evaluated. We have found that a irregular Ti silicide growth occurred on B-ion implanted substrates while no irregular growth is observed on other types of substrates. No irregular growth occurred when CVD-Ti silicide film had the TiSi phase whereas the irregular growth occurred with the C49-TiSi2 formation. It has been clarified that C49-TiSi2 formation during deposition causes the irregular growth of CVD-Ti silicide film on B-ion implanted Si substrate.

引用

页码：64 / 66

页数：3

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