Low-loss high power microwave switching using novel nitride based MOS heterostructure field-effect transistors

被引：0

作者：

Simin, G ^{[1
]}

Koudymov, A ^{[1
]}

Hu, X ^{[1
]}

Zhang, J ^{[1
]}

Ali, M ^{[1
]}

Khan, MA ^{[1
]}

机构：

[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

来源：

1ST IEEE INTERNATIONAL CONFERENCE ON CIRCUITS AND SYSTEMS FOR COMMNICATIONS, PROCEEDINGS | 2002年

关键词：

microwave; switch; FET; HFET; MOSHFET; HEMT; GaN;

D O I：

10.1109/OCCSC.2002.1029123

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Microwave switch based on a novel nitride based Metal-Oxide-Semiconductor Heterostructure Field Effect Transistor (MOSHFET) is proposed and demonstrated. Due to record high saturation current and breakdown voltage, negligible gate leakage. current and low gate capacitance the proposed switch allows for lees than 0.3 dB insertion loss and more than 35 dB isolation. The unique feature of the MOSHFET based switch is the maximum switching power, in excess of 80 W for a 1 mm wide active element.

引用

页码：390 / 391

页数：2

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