Characteristics of Ce-Doped ZrO2 Dielectric Films Prepared by a Solution Deposition Process

被引：12

作者：

Lee, Myung Soo ^{[1
]}

An, Chee-Hong ^{[1
]}

Lim, Jun Hyung ^{[2
]}

Joo, Jin-Ho ^{[1
]}

Lee, Hoo-Jeong ^{[1
]}

Kim, Hyoungsub ^{[1
]}

机构：

[1] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 440746, South Korea

[2] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2010年 / 157卷 / 06期

关键词：

CONDUCTION MECHANISM; THIN-FILMS; ZIRCONIA; DEVICES; OXIDE; CERIA;

D O I：

10.1149/1.3367749

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The microstructural and electrical properties of sol-gel deposited ultrathin Zr1-xCexO2 films with different Ce contents (x = 0, 0.1, 0.3, and 0.5) were studied using various characterization tools. Ce doping reduced the crystallization (densification) temperature and increased the dielectric constant of the Zr1-xCexO2 film. There was no degradation of the hysteresis characteristics, and a systematic negative shift in the flatband voltage was observed by incorporating Ce atoms. Leakage current measurements showed no detrimental effects of Ce doping up to x = 0.5, and the conduction mechanism analyses revealed that the Zr1-xCexO2 films follow a Poole-Frenkel (PF) conduction, exhibiting a systematic increase in the linear slope of the PF plot possibly due to the decrease in dielectric trap sites with increasing Ce content. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3367749] All rights reserved.

引用

页码：G142 / G146

页数：5

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