Formation window of gas bubble superlattice in molybdenum under ion implantation

被引:12
|
作者
Sun, Cheng [1 ]
Sprouster, David J. [2 ,3 ]
Zhang, Yongfeng [1 ,4 ]
Chen, Di [5 ]
Wang, Yongqiang [5 ]
Ecker, Lynne E. [2 ]
Gan, Jian [1 ]
机构
[1] Idaho Natl Lab, Idaho Falls, ID 83415 USA
[2] Brookhaven Natl Lab, Upton, NY 11973 USA
[3] SUNY Stony Brook, Dept Mat Sci & Chem Engn, Stony Brook, NY 11794 USA
[4] Univ Wisconsin, Dept Engn Phys, Madison, WI 53706 USA
[5] Los Alamos Natl Lab, Los Alamos, NM 87545 USA
关键词
NEUTRON-IRRADIATED MOLYBDENUM; SUPER-LATTICE; VOID-LATTICE; METALS; COPPER; TEMPERATURE; BEHAVIOR; ARRAY; HE;
D O I
10.1103/PhysRevMaterials.3.103607
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Self-assembly of defects in materials can create novel physical properties with potential applications in various technological fields. Here, we studied the physical mechanism of self-assembly of helium gas bubbles in molybdenum under ion implantation and unified the formation window of gas bubble/void superlattice in terms of irradiation temperatures and helium-atomic parts per million/displacements per atom damage levels. The ion fluence and temperature-dependent formation of gas bubble superlattice in molybdenum was examined via both transmission electron microscopy and synchrotron-based small-angle x-ray scattering. The formation of gas bubble superlattice is linked with specific implantation conditions, including ion fluence and implantation temperature. The bubble lattice constant increases with increasing the implantation temperature from 150 to 450 degrees C. Once the gas bubble superlattice forms, increasing fluence has no effect on the bubble lattice constant. Both experiments and atomic kinetic Monte Carlo modeling indicate a three-stage formation process of gas bubble superlattice, from random bubbles to planar ordering and then to three-dimensional superlattices, suggesting that one-dimensional diffusion of self-interstitial atoms can cause the formation of gas bubble superlattice. Our study advances the understanding of defect self-assembly in materials in nonequilibrium states and provides an approach of managing the defect formation and transforming them from a liability into an asset in a controllable way.
引用
收藏
页数:10
相关论文
共 50 条
  • [31] A MODEL OF DEFECT FORMATION IN A SEMICONDUCTOR UNDER LIGHT-ION IMPLANTATION
    KONDRACHUK, AV
    PETROPAVLOVSKY, AI
    IORDANISHVILI, VZ
    [J]. UKRAINSKII FIZICHESKII ZHURNAL, 1990, 35 (10): : 1573 - 1579
  • [32] FORMATION OF ALLOY MICROSPHERES UNDER THE IMPLANTATION OF INTENSE PULSED ION BEAMS
    江兴流
    王天民
    李秉清
    高金城
    [J]. Science Bulletin, 1989, (17) : 1421 - 1424
  • [33] BUBBLE PROPAGATION BY DISKS FORMED BY ION-IMPLANTATION
    JOUVE, H
    SEGALINI, S
    PIAGUET, J
    [J]. IEEE TRANSACTIONS ON MAGNETICS, 1976, 12 (06) : 660 - 662
  • [34] ION-IMPLANTATION EFFECTS IN BUBBLE GARNET MATERIALS
    PEREZ, A
    MAREST, G
    GERARD, P
    MADORE, M
    MARTIN, P
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY): : 1179 - 1185
  • [35] EFFECT OF ION-IMPLANTATION ON BUBBLE TRANSLATION VELOCITY
    KONISHI, S
    HSU, T
    BROWN, BR
    [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (03) : 1894 - 1896
  • [36] Helium accumulation and bubble formation in FeCoNiCr alloy under high fluence He+ implantation
    Chen, Da
    Tong, Y.
    Li, H.
    Wang, J.
    Zhao, Y. L.
    Hu, Alice
    Kai, J. J.
    [J]. JOURNAL OF NUCLEAR MATERIALS, 2018, 501 : 208 - 216
  • [37] CHANNELING EFFECTS ON ION IMPLANTATION OF BUBBLE MATERIAL.
    Wen, Weiguang
    Zhou, Fong
    Huang, Qingqing
    Guan, Guixian
    [J]. IEEE Transactions on Magnetics, 1985, MAG-21 (06) : 2672 - 2675
  • [38] CHANNELING EFFECTS ON ION-IMPLANTATION OF BUBBLE MATERIAL
    WEN, WG
    ZHOU, F
    HUANG, QQ
    GUAN, GX
    [J]. IEEE TRANSACTIONS ON MAGNETICS, 1985, 21 (06) : 2672 - 2675
  • [39] Chemical effects on He bubble superlattice formation in high entropy alloys
    Harrison, R. W.
    Greaves, G.
    Le, H.
    Bei, H.
    Zhang, Y.
    Donnelly, S. E.
    [J]. CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE, 2019, 23 (04):
  • [40] Phosphorus and boron ion implantation profiles in molybdenum gates
    Tada, Yoko
    Suzuki, Kunihiro
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (01) : 173 - 178