A MODEL OF DEFECT FORMATION IN A SEMICONDUCTOR UNDER LIGHT-ION IMPLANTATION

The model of stable radiation defect formation is considered on the basis of phenomenological equations of <<diffusion-reaction>> type. These defects are generated by light ion implantation into the subsurface layer and the evolution of their distributions depends on the diffusion of primary defects-vacanies V and interstitials I as well as on their interaction between themselves and with the crystal surface. It is shown that complex formation is a dominating process in comparison with V-I recombination and absorbtion of defects by unsaturable traps. The simulation and analysis of experimental data permit concluding that near the crystal surface there is a thin layer of <<traps>> for vacancies-<<nuclei>> of future coagulation. Conditions of formation of characteristic types of secondary radiation defect distributions near the surface are determined.